K9UMGB8U7M vs K9PDG08U5M Comparaison
Comparaison détaillée côte à côte de K9UMGB8U7M par Samsung Electronics et K9PDG08U5M par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ Fin de vieComparaison des spécifications
| Paramètre | K9UMGB8U7M | K9PDG08U5M |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | EEPROM |
| Statut du cycle de vie | Actif | Fin de vie |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $4,20 |
| Type de mémoire | NAND Flash | NAND Flash (SLC) |
| Manufacturer | Samsung Electronics | — |
| Family | K9U series NAND Flash | — |
| Data Interface | [DATA_NEEDED: Data Interface] | — |
| Density | [DATA_NEEDED: Memory Density] | 4 Gbit |
| Organisation de la mémoire | [DATA_NEEDED: Memory Organization] | x8 (multiplexed I/O) |
| Cell Type | [DATA_NEEDED: Cell Type (SLC/MLC/TLC)] | — |
| Tension d'alimentation | [DATA_NEEDED: Supply Voltage] | [DATA_NEEDED: supply voltage range] |
| Page Size | [DATA_NEEDED: Page Size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: Block Size] | [DATA_NEEDED: block size] |
| Read Time | [DATA_NEEDED: Read Time] | — |
| Program Time | [DATA_NEEDED: Program Time] | — |
| Endurance | [DATA_NEEDED: Program/Erase Cycles] | [DATA_NEEDED: program/erase cycles] |
| Température de fonctionnement | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Boîtier | [DATA_NEEDED: Package Type] | TSOP1-48 |
| Type de montage | [DATA_NEEDED: Mounting Type] | Surface Mount |
| Statut RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |