K9UMGB8U7M vs K9PDG08U5M 比較

詳細な並列比較: K9UMGB8U7M メーカー: Samsung Electronics および K9PDG08U5M メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Samsung Electronics
K9UMGB8U7M K9UMGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9UMGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9UMGB8U7M ✓ 生産中
Samsung Electronics
K9PDG08U5M K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M ✗ 生産終了

仕様比較

パラメータ K9UMGB8U7M K9PDG08U5M
ブランド Samsung Electronics Samsung Electronics
カテゴリ Memory ICs EEPROM
ライフサイクル状態 有効 製造終了
在庫状況 In Stock In Stock
単価(USD) $0.00 $4.20
メモリタイプ NAND Flash NAND Flash (SLC)
Manufacturer Samsung Electronics —
Family K9U series NAND Flash —
Data Interface [DATA_NEEDED: Data Interface] —
Density [DATA_NEEDED: Memory Density] 4 Gbit
メモリ構成 [DATA_NEEDED: Memory Organization] x8 (multiplexed I/O)
Cell Type [DATA_NEEDED: Cell Type (SLC/MLC/TLC)] —
電源電圧 [DATA_NEEDED: Supply Voltage] [DATA_NEEDED: supply voltage range]
Page Size [DATA_NEEDED: Page Size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: Block Size] [DATA_NEEDED: block size]
Read Time [DATA_NEEDED: Read Time] —
Program Time [DATA_NEEDED: Program Time] —
Endurance [DATA_NEEDED: Program/Erase Cycles] [DATA_NEEDED: program/erase cycles]
動作温度 [DATA_NEEDED: Operating Temperature Range] [DATA_NEEDED: operating temperature range]
パッケージ [DATA_NEEDED: Package Type] TSOP1-48
実装タイプ [DATA_NEEDED: Mounting Type] Surface Mount
RoHS ステータス [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS status]
Page Read Time — [DATA_NEEDED: page read time]
Page Program Time — [DATA_NEEDED: page program time]
Block Erase Time — [DATA_NEEDED: block erase time]
Access Interface — Asynchronous multiplexed address/data, CLE/ALE control
Ready/Busy Output — Yes (R/B, open-drain)
Write Protect Pin — Yes (/WP)

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