K9UMGB8U7M - Samsung NAND Flash Memory | Samsung Electronics
MPN: K9UMGB8U7M ✓ Active| Qty | Unit Price | Extended |
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| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for K9UMGB8U7M — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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K9QDGB8U7M
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View Datasheet →K9PDG08U5M
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View Datasheet →K9MDG08U5M
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View Datasheet →K9LCG08U1M
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$11.85 / Unit
View Datasheet →K9HCG08U1M
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →K9UMGB8U7M Maximum Ratings & Electrical Characteristics
| Memory Type | NAND Flash |
| Manufacturer | Samsung Electronics |
| Family | K9U series NAND Flash |
K9UMGB8U7M [data_needed: package type] Pin Configuration Guide
Complete pinout information for K9UMGB8U7M ([data_needed: package type] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: package type] package pinout diagram for K9UMGB8U7M](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for K9UMGB8U7M.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K9UMGB8U7M is suitable for 6 applications: Set-Top Box and Digital TV Firmware Storage, Industrial Embedded Controllers, Networking Equipment Boot Storage, Consumer Electronics Mass Storage, Solid-State Drive and Storage Module Design, Smart Home and IoT Hub Storage.
Set-Top Box and Digital TV Firmware Storage
The K9UMGB8U7M fits set-top box and digital television designs that must store firmware, channel databases, and application images in non-volatile memory. Samsung K9-family NAND provides the standard asynchronous x8 command interface that mainstream STB SoCs boot from directly, and its page/block organization supports efficient in-field firmware updates with copy-back operations. Placed on the boot bus with the host's NAND controller handling ECC and bad-block management, the device delivers high-density storage at low cost per bit. Design consideration: verify the controller ECC strength matches the NAND generation's requirement, and reserve replacement blocks in the partition map for long-term reliability across thousands of program/erase cycles in fleet deployments.
Recommended
Industrial Embedded Controllers
Industrial PLCs, HMIs, and embedded controllers use the K9UMGB8U7M as low-cost non-volatile storage for application code, configuration data, and logging. Samsung K9-family NAND withstands the program/erase workload of periodic log writes when paired with a wear-leveling file system, and its standard interface integrates with common industrial SoCs. The part's non-volatile nature ensures configuration survives power loss, which is essential in factory automation. Design consideration: industrial environments see wide temperature swings and brown-outs, so enable write-protect during power-fail events and validate data retention over the full operating temperature using the reliability tables in the Samsung datasheet before deployment.
Recommended
Networking Equipment Boot Storage
Routers, switches, and access points store bootloader and OS images in raw NAND such as the K9UMGB8U7M. The standard asynchronous NAND command interface supported by Samsung's K9 family works directly with the boot ROMs of common networking SoCs, while the device's page organization allows redundant image slots (A/B partitions) for fail-safe firmware upgrades. With the host implementing ECC and bad-block skipping, the NAND provides gigabit-class hardware with reliable field-updatable storage at minimal BOM cost. Design consideration: dual-image schemes should each fit within independently erased block groups so a failed update never corrupts both slots, and write-protect should gate the primary bootloader region.
Recommended
Consumer Electronics Mass Storage
Consumer products such as smart speakers, toys, appliances, and small displays use the K9UMGB8U7M to store media assets, voice models, and application data at the lowest cost per gigabyte. Samsung's K9-family NAND integrates with low-cost MCU host platforms, and its asynchronous interface requires no high-speed PHY design. Copy-back program operations reduce host CPU load when relocating data during garbage collection. Design consideration: consumer products typically see infrequent writes, so endurance is rarely the limiting factor - but cost-driven designs should size the partition table conservatively and include spare blocks, since consumer field conditions (power interruptions, heat buildup in enclosed housings) accelerate bad-block growth over product lifetime.
Recommended
Solid-State Drive and Storage Module Design
The K9UMGB8U7M can serve as a raw NAND component in SSD controllers and storage module designs, where multiple K9-family devices are combined under a dedicated NAND controller. Samsung K9 NAND's page/block architecture supports parallel channel architectures, and standard command timing simplifies controller firmware across device generations. In SSD applications, the controller performs aggressive ECC (BCH or LDPC), wear-leveling, and garbage collection that raw NAND requires. Design consideration: interleave multiple NAND dies across channels to hide program/erase latencies, and match the controller's supported ONFI timing modes to the Samsung datasheet specifications to avoid marginal read windows at maximum clock rates.
Recommended
Smart Home and IoT Hub Storage
Smart home hubs, security gateways, and IoT edge devices use the K9UMGB8U7M to persist device provisioning data, firmware, and event buffers. Samsung K9-family NAND pairs well with mid-range IoT SoCs whose boot ROMs support the standard asynchronous NAND interface, and the device's non-volatile storage keeps security keys and network credentials intact through power cycles. Because IoT devices may write frequent sensor logs, the host's wear-leveling algorithm and the NAND's endurance rating jointly determine product lifetime. Design consideration: buffer log writes in RAM and commit in full pages to minimize program cycles, and reserve at least the datasheet-recommended spare-block ratio for long-term reliability in always-on deployments.
Recommended
Recommended Products Summary
Engineering reference data for K9UMGB8U7M — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K9QDGB8U7M | K9PDG08U5M | K9MDG08U5M |
|---|---|---|---|---|
| Package | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Product Family | K9U series NAND Flash | K9U series NAND Flash | K9P series NAND Flash | K9M series NAND Flash |
| Data Interface Width | [DATA_NEEDED] | [DATA_NEEDED] | x8 (per MPN 08 field) | x8 (per MPN 08 field) |
| Memory Density | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Supply Voltage | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| External ECC Required | Yes (raw NAND) | Yes (raw NAND) | Yes (raw NAND) | Yes (raw NAND) |
| Lifecycle Status | Active (verify with Samsung) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Latest-generation K9U family naming (vs K9HCG08U1M)
- Identical suffix structure to K9QDGB8U7M (vs K9QDGB8U7M)
- Raw NAND cost structure (vs K9PDG08U5M)
Design Notes
Raw NAND such as the K9UMGB8U7M does not perform error correction internally. The host controller must implement the ECC strength specified for this NAND generation in the Samsung datasheet - under-specified ECC is the single most common cause of field data corruption in raw-NAND designs. Additionally, implement bad-block management from the factory-marked bad-block table and re-evaluate blocks after every erase cycle. Never assume a block is good simply because it passed at production test.
Decouple the NAND VCC rail with at least a 0.1uF ceramic capacitor placed within 5 mm of the device power pin, plus bulk capacitance near the board entry point. Program and erase operations draw short current bursts that can droop a weak supply rail and cause program failures. If the shared rail serves other peripherals, ensure the worst-case simultaneous programming current (per datasheet ICC values) is budgeted in the power supply design.
Keep the NAND control lines (CLE, ALE, WE, RE, CE, R/B) as a routed group with matched lengths where practical, and avoid routing them adjacent to switching regulator nodes that can capacitively couple glitches onto WE or RE. Enable the write-protect pin during power-up and power-down sequencing to prevent spurious program commands while VCC is unstable. For high-vibration products, confirm the package solder-joint reliability per the Samsung package reliability report.
Compliance Information
Compliance status for the exact K9UMGB8U7M suffix was not found in the retrieved web data. Obtain the compliance certificate from Samsung's environmental documentation portal or your distributor.
