M29F800FB55N3F2 vs M29F160FB55N3F2 Comparison

Detailed side-by-side comparison of M29F800FB55N3F2 by Micron Technology and M29F160FB55N3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
M29F800FB55N3F2 M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 ✓ Active
Micron Technology
M29F160FB55N3F2 M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 Obsolete

Specification Comparison

Parameter M29F800FB55N3F2 M29F160FB55N3F2
Brand Micron Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Obsolete
Stock Status In Stock In Stock
Unit Price (USD) $2.47 $5.60
Memory Density 8389 kbits (8 Mbit) —
Organization 1M x 8 / 512K x 16 1 Mword x 16 bits / 2 Mbyte x 8 bits
Supply Voltage 5 V 5 V
Access Time 55 ns 55 ns
Interface Type Parallel NOR —
Boot Block Architecture Bottom Boot Block Bottom Boot Block
Program/Erase Controller Embedded byte/word program algorithms Embedded byte/word program algorithms
Operating Temperature -40C to +125C -40 to +125 C
Temperature Grade Automotive (AEC-Q100) —
Package Type 48-pin TSOP1 48-TSOP
Package Shape Rectangular (JESD designation TSOP1) —
Terminal Count 48 —
JESD-609 Termination Code e3 (lead-free) —
Mounting Type Surface Mount Surface Mount
Packaging Tape & Reel (T/R) —
RoHS Status Compliant (lead-free terminations) Compliant (lead-free)
Memory Type — Parallel NOR Flash
Density — 16777 kbits (16 Mbit)
Number of Words — 1000 k
Bits per Word — 16 bits
Interface — Parallel
Termination Finish — Lead-free (F2 suffix)
Block Protection — Hardware boot block protection
Speed Grade (from MPN) — 55 (55 ns)

Datasheets & Resources

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