M29W640GB70N3F vs M29W640GB70N3E Comparison
Detailed side-by-side comparison of M29W640GB70N3F by Micron Technology and M29W640GB70N3E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29W640GB70N3F | M29W640GB70N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Obsolete | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.66 | $7.05 |
| Memory Type | NOR Flash, Parallel | NOR Flash |
| Density | 64 Mb (8 MB) | 64 Mbit (8 MByte) |
| Organization | x8 / x16 | 4M x16 / 8M x8 |
| Access Time | 70 ns | 70 ns |
| Supply Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Operating Temperature | -40C to +125C | -40C to +125C |
| Qualification | Automotive AEC-Q100 | — |
| Package | 48-TSOP I | 48-TSOP I |
| Mounting Type | Surface Mount | Surface Mount |
| Program/Erase Interface | Parallel command set with status polling | — |
| Block Architecture | Uniform block (GB variant) | — |
| Part Status | Obsolete | — |
| RoHS Status | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | [DATA_NEEDED: program/erase endurance cycles] |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Read Current | [DATA_NEEDED: active read current] | — |
| Interface | — | Parallel, asynchronous |
| Boot Block | — | Bottom boot block (GB) |
| Programming | — | Word/Byte program, block erase |
| Command Set | — | M29W family standard command set |
| Chipset Validation | — | N/A |
| FBGA Code | — | N/A |
| Data Retention | — | [DATA_NEEDED: data retention] |