M29W640GB70N3F vs M29W640GB70N3E Comparación
Comparación detallada lado a lado de M29W640GB70N3F por Micron Technology y M29W640GB70N3E por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M29W640GB70N3F | M29W640GB70N3E |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Obsolete | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,66 | $7,05 |
| Tipo de memoria | NOR Flash, Parallel | NOR Flash |
| Density | 64 Mb (8 MB) | 64 Mbit (8 MByte) |
| Organización de memoria | x8 / x16 | 4M x16 / 8M x8 |
| Access Time | 70 ns | 70 ns |
| Tensión de alimentación | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Temperatura de funcionamiento | -40C to +125C | -40C to +125C |
| Qualification | Automotive AEC-Q100 | — |
| Encapsulado | 48-TSOP I | 48-TSOP I |
| Tipo de montaje | Surface Mount | Surface Mount |
| Program/Erase Interface | Parallel command set with status polling | — |
| Block Architecture | Uniform block (GB variant) | — |
| Part Status | Obsolete | — |
| Estado RoHS | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | [DATA_NEEDED: program/erase endurance cycles] |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Read Current | [DATA_NEEDED: active read current] | — |
| Interfaz | — | Parallel, asynchronous |
| Boot Block | — | Bottom boot block (GB) |
| Programming | — | Word/Byte program, block erase |
| Command Set | — | M29W family standard command set |
| Chipset Validation | — | N/A |
| FBGA Code | — | N/A |
| Data Retention | — | [DATA_NEEDED: data retention] |