M29W640GB70N3F vs M29W640GB70N3E 对比

详细并排对比 M29W640GB70N3F 出自 Micron Technology 和 M29W640GB70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W640GB70N3F M29W640GB70N3F - 64Mb 70ns Parallel NOR Flash | Micron

M29W640GB70N3F - 64Mb 70ns Parallel NOR Flash | Micron

M29W640GB70N3F Obsolete
Micron Technology
M29W640GB70N3E M29W640GB70N3E - 64Mb 3V Parallel NOR Flash 70ns | Micron

M29W640GB70N3E - 64Mb 3V Parallel NOR Flash 70ns | Micron

M29W640GB70N3E ✓ 量产中

规格对比

参数 M29W640GB70N3F M29W640GB70N3E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 Obsolete 有效
库存状态 有库存 有库存
单价(USD) $2.66 $7.05
存储器类型 NOR Flash, Parallel NOR Flash
Density 64 Mb (8 MB) 64 Mbit (8 MByte)
存储组织 x8 / x16 4M x16 / 8M x8
Access Time 70 ns 70 ns
电源电压 2.7 V to 3.6 V 2.7 V to 3.6 V
工作温度 -40C to +125C -40C to +125C
Qualification Automotive AEC-Q100 —
封装 48-TSOP I 48-TSOP I
安装类型 Surface Mount Surface Mount
Program/Erase Interface Parallel command set with status polling —
Block Architecture Uniform block (GB variant) —
Part Status Obsolete —
RoHS 状态 Compliant (per JLCPCB listing) [DATA_NEEDED: RoHS status]
Endurance [DATA_NEEDED: program/erase endurance cycles] [DATA_NEEDED: program/erase endurance cycles]
Standby Current [DATA_NEEDED: standby current] —
Read Current [DATA_NEEDED: active read current] —
接口 — Parallel, asynchronous
Boot Block — Bottom boot block (GB)
Programming — Word/Byte program, block erase
Command Set — M29W family standard command set
Chipset Validation — N/A
FBGA Code — N/A
Data Retention — [DATA_NEEDED: data retention]

数据手册与资源

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