M29W640GB70N3F vs M29W640GB70N3E Vergleich
Detaillierter Direktvergleich von M29W640GB70N3F von Micron Technology und M29W640GB70N3E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W640GB70N3F | M29W640GB70N3E |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Obsolete | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,66 | $7,05 |
| Speichertyp | NOR Flash, Parallel | NOR Flash |
| Density | 64 Mb (8 MB) | 64 Mbit (8 MByte) |
| Speicherorganisation | x8 / x16 | 4M x16 / 8M x8 |
| Access Time | 70 ns | 70 ns |
| Versorgungsspannung | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Qualification | Automotive AEC-Q100 | — |
| Gehäuse | 48-TSOP I | 48-TSOP I |
| Montageart | Surface Mount | Surface Mount |
| Program/Erase Interface | Parallel command set with status polling | — |
| Block Architecture | Uniform block (GB variant) | — |
| Part Status | Obsolete | — |
| RoHS-Status | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | [DATA_NEEDED: program/erase endurance cycles] |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Read Current | [DATA_NEEDED: active read current] | — |
| Schnittstelle | — | Parallel, asynchronous |
| Boot Block | — | Bottom boot block (GB) |
| Programming | — | Word/Byte program, block erase |
| Command Set | — | M29W family standard command set |
| Chipset Validation | — | N/A |
| FBGA Code | — | N/A |
| Data Retention | — | [DATA_NEEDED: data retention] |