MBRS260T3G vs SRVBS260NT3G Comparison

Detailed side-by-side comparison of MBRS260T3G by onsemi and SRVBS260NT3G by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter MBRS260T3G SRVBS260NT3G
Brand onsemi onsemi
Category Diodes Diodes
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.15 $0.11
Diode Type Schottky Power Rectifier (single) —
Package SMB (DO-214AA-style surface mount) SMB (surface mount, C-bend leads)
DC Reverse Voltage (Vr) Max 60 V —
Average Rectified Forward Current (Io) 2 A —
Forward Voltage (Vf) Max @ If 630 mV @ 2 A —
Peak Non-Repetitive Surge Current (Ifsm) 25 A (8.3 ms half-sine, per datasheet) —
Reverse Recovery Time (trr) Negligible (Schottky, minority-carrier device) —
Operating Junction Temperature -65C to +150C —
Storage Temperature -65C to +150C —
Mounting Type Surface Mount Surface Mount
Construction Epitaxial with oxide passivation and metal overlay contact —
Polarity Color band indicates cathode —
MSL Level 1 per JEDEC J-STD-020 —
RoHS Status Compliant Compliant
REACH Status Compliant —
Primary Applications Low-voltage high-frequency switching PSUs, free-wheeling, polarity protection —
Manufacturer — onsemi
Product Type — Schottky Power Rectifier (single diode)
Reverse Test Voltage (VRRM) — 60 V
Maximum Average Forward Current (IF(AV)) — 2 A
Maximum Forward Voltage (VF) — 0.63 V at 2 A
Operating Temperature Range — -55 C to +125 C
Peak Reflow Temperature — 260 C
Terminal Form — C BEND
Terminal Position — DUAL
Number of Terminals — 2
Package Shape — RECTANGULAR
Terminal Finish — Matte Tin
Diode Technology — Schottky Barrier (epitaxial construction, oxide passivation, metal overlay contact)

Datasheets & Resources

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