MBRS260T3G vs SRVBS260NT3G 비교

다음의 상세 나란히 비교: MBRS260T3G 제조: onsemi 및 SRVBS260NT3G 제조: onsemi. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 MBRS260T3G SRVBS260NT3G
브랜드 onsemi onsemi
카테고리 Diodes Diodes
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.15 $0.11
Diode Type Schottky Power Rectifier (single) —
패키지 SMB (DO-214AA-style surface mount) SMB (surface mount, C-bend leads)
DC Reverse Voltage (Vr) Max 60 V —
Average Rectified Forward Current (Io) 2 A —
Forward Voltage (Vf) Max @ If 630 mV @ 2 A —
Peak Non-Repetitive Surge Current (Ifsm) 25 A (8.3 ms half-sine, per datasheet) —
Reverse Recovery Time (trr) Negligible (Schottky, minority-carrier device) —
동작 접합 온도 -65C to +150C —
Storage Temperature -65C to +150C —
실장 유형 Surface Mount Surface Mount
Construction Epitaxial with oxide passivation and metal overlay contact —
Polarity Color band indicates cathode —
MSL 레벨 1 per JEDEC J-STD-020 —
RoHS 상태 Compliant Compliant
REACH Status Compliant —
Primary Applications Low-voltage high-frequency switching PSUs, free-wheeling, polarity protection —
Manufacturer — onsemi
Product Type — Schottky Power Rectifier (single diode)
Reverse Test Voltage (VRRM) — 60 V
Maximum Average Forward Current (IF(AV)) — 2 A
Maximum Forward Voltage (VF) — 0.63 V at 2 A
동작 온도 범위 — -55 C to +125 C
Peak Reflow Temperature — 260 C
Terminal Form — C BEND
Terminal Position — DUAL
Number of Terminals — 2
Package Shape — RECTANGULAR
Terminal Finish — Matte Tin
Diode Technology — Schottky Barrier (epitaxial construction, oxide passivation, metal overlay contact)

데이터시트 & 자료

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