MBRS260T3G vs SRVBS260NT3G Сравнение
Подробное сравнение бок о бок MBRS260T3G от onsemi и SRVBS260NT3G от onsemi. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | MBRS260T3G | SRVBS260NT3G |
|---|---|---|
| Бренд | onsemi | onsemi |
| Категория | Diodes | Diodes |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,15 | $0,11 |
| Diode Type | Schottky Power Rectifier (single) | — |
| Корпус | SMB (DO-214AA-style surface mount) | SMB (surface mount, C-bend leads) |
| DC Reverse Voltage (Vr) Max | 60 V | — |
| Average Rectified Forward Current (Io) | 2 A | — |
| Forward Voltage (Vf) Max @ If | 630 mV @ 2 A | — |
| Peak Non-Repetitive Surge Current (Ifsm) | 25 A (8.3 ms half-sine, per datasheet) | — |
| Reverse Recovery Time (trr) | Negligible (Schottky, minority-carrier device) | — |
| Рабочая температура перехода | -65C to +150C | — |
| Storage Temperature | -65C to +150C | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Construction | Epitaxial with oxide passivation and metal overlay contact | — |
| Polarity | Color band indicates cathode | — |
| Уровень MSL | 1 per JEDEC J-STD-020 | — |
| Статус RoHS | Compliant | Compliant |
| REACH Status | Compliant | — |
| Primary Applications | Low-voltage high-frequency switching PSUs, free-wheeling, polarity protection | — |
| Manufacturer | — | onsemi |
| Product Type | — | Schottky Power Rectifier (single diode) |
| Reverse Test Voltage (VRRM) | — | 60 V |
| Maximum Average Forward Current (IF(AV)) | — | 2 A |
| Maximum Forward Voltage (VF) | — | 0.63 V at 2 A |
| Диапазон рабочих температур | — | -55 C to +125 C |
| Peak Reflow Temperature | — | 260 C |
| Terminal Form | — | C BEND |
| Terminal Position | — | DUAL |
| Number of Terminals | — | 2 |
| Package Shape | — | RECTANGULAR |
| Terminal Finish | — | Matte Tin |
| Diode Technology | — | Schottky Barrier (epitaxial construction, oxide passivation, metal overlay contact) |