MBRS260T3G vs SRVBS260NT3G Vergleich

Detaillierter Direktvergleich von MBRS260T3G von onsemi und SRVBS260NT3G von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter MBRS260T3G SRVBS260NT3G
Marke onsemi onsemi
Kategorie Diodes Diodes
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,15 $0,11
Diode Type Schottky Power Rectifier (single) —
Gehäuse SMB (DO-214AA-style surface mount) SMB (surface mount, C-bend leads)
DC Reverse Voltage (Vr) Max 60 V —
Average Rectified Forward Current (Io) 2 A —
Forward Voltage (Vf) Max @ If 630 mV @ 2 A —
Peak Non-Repetitive Surge Current (Ifsm) 25 A (8.3 ms half-sine, per datasheet) —
Reverse Recovery Time (trr) Negligible (Schottky, minority-carrier device) —
Betriebs-Sperrschichttemperatur -65C to +150C —
Storage Temperature -65C to +150C —
Montageart Surface Mount Surface Mount
Construction Epitaxial with oxide passivation and metal overlay contact —
Polarity Color band indicates cathode —
MSL-Level 1 per JEDEC J-STD-020 —
RoHS-Status Compliant Compliant
REACH Status Compliant —
Primary Applications Low-voltage high-frequency switching PSUs, free-wheeling, polarity protection —
Manufacturer — onsemi
Product Type — Schottky Power Rectifier (single diode)
Reverse Test Voltage (VRRM) — 60 V
Maximum Average Forward Current (IF(AV)) — 2 A
Maximum Forward Voltage (VF) — 0.63 V at 2 A
Betriebstemperaturbereich — -55 C to +125 C
Peak Reflow Temperature — 260 C
Terminal Form — C BEND
Terminal Position — DUAL
Number of Terminals — 2
Package Shape — RECTANGULAR
Terminal Finish — Matte Tin
Diode Technology — Schottky Barrier (epitaxial construction, oxide passivation, metal overlay contact)

Datenblätter & Ressourcen

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