MMA25312BT1 vs MMA20312BT1 Comparison

Detailed side-by-side comparison of MMA25312BT1 by NXP Semiconductors and MMA20312BT1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MMA25312BT1 MMA25312BT1 - 2.3-2.7 GHz 26 dB InGaP HBT Driver Amplifier | NXP

MMA25312BT1 - 2.3-2.7 GHz 26 dB InGaP HBT Driver Amplifier | NXP

MMA25312BT1 ✓ Active

Specification Comparison

Parameter MMA25312BT1 MMA20312BT1
Brand NXP Semiconductors NXP Semiconductors
Category RF Amplifiers RF Amplifiers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.65 $4.85
Technology InGaP HBT (Heterojunction Bipolar Transistor) InGaP HBT (Heterojunction Bipolar Transistor)
Topology 2-stage linear driver amplifier 2-stage Class AB cascade
Frequency Range 2300 MHz to 2700 MHz 1800 MHz to 2200 MHz
Small-Signal Gain 26 dB 27.2 dB
Saturated Output Power 31 dBm (typ) —
Noise Figure 3.8 dB at 2.5 GHz —
Supply Voltage 3 V to 5 V 5 V
Supply Current 124 mA (typ) —
Test Frequency 2.5 GHz —
Operating Temperature -40 °C to +85 °C [DATA_NEEDED: operating temperature range]
Package 12-VFQFN Exposed Pad (QFN-12 EP) —
Mounting Type Surface Mount Surface Mount
RF Type WiMAX, WLAN —
RoHS Status Compliant Compliant (per NXP product page)
MSL Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Product Type — RF Linear Power Amplifier
Saturated Output Power (Psat) — 30.5 dBm (~1.1 W)
Supply Current (Idq) — 70 mA typical
Package / Case — 12-QFN (3x3 mm) with Exposed Pad
RF Input/Output Match — Internal 50 ohm
Supported RF Standards — LTE, PCS, TD-SCDMA, UMTS
Lead-Free — Yes
Packaging — Tape & Reel

Datasheets & Resources

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