MMA25312BT1 vs MMA20312BT1 对比
详细并排对比 MMA25312BT1 出自 NXP Semiconductors 和 MMA20312BT1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MMA25312BT1 - 2.3-2.7 GHz 26 dB InGaP HBT Driver Amplifier | NXP
MMA25312BT1 ✓ 量产中NXP Semiconductors
MMA20312BT1 - 2-Stage InGaP HBT Linear Amplifier, 1.8-2.2 GHz | NXP
MMA20312BT1 ✓ 量产中规格对比
| 参数 | MMA25312BT1 | MMA20312BT1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | RF Amplifiers | RF Amplifiers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.65 | $4.85 |
| Technology | InGaP HBT (Heterojunction Bipolar Transistor) | InGaP HBT (Heterojunction Bipolar Transistor) |
| 拓扑 | 2-stage linear driver amplifier | 2-stage Class AB cascade |
| Frequency Range | 2300 MHz to 2700 MHz | 1800 MHz to 2200 MHz |
| Small-Signal Gain | 26 dB | 27.2 dB |
| Saturated Output Power | 31 dBm (typ) | — |
| Noise Figure | 3.8 dB at 2.5 GHz | — |
| 电源电压 | 3 V to 5 V | 5 V |
| 电源电流 | 124 mA (typ) | — |
| Test Frequency | 2.5 GHz | — |
| 工作温度 | -40 °C to +85 °C | [DATA_NEEDED: operating temperature range] |
| 封装 | 12-VFQFN Exposed Pad (QFN-12 EP) | — |
| 安装类型 | Surface Mount | Surface Mount |
| RF Type | WiMAX, WLAN | — |
| RoHS 状态 | Compliant | Compliant (per NXP product page) |
| MSL 等级 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Product Type | — | RF Linear Power Amplifier |
| Saturated Output Power (Psat) | — | 30.5 dBm (~1.1 W) |
| Supply Current (Idq) | — | 70 mA typical |
| 封装 / 外壳 | — | 12-QFN (3x3 mm) with Exposed Pad |
| RF Input/Output Match | — | Internal 50 ohm |
| Supported RF Standards | — | LTE, PCS, TD-SCDMA, UMTS |
| Lead-Free | — | Yes |
| Packaging | — | Tape & Reel |