MRFE6S9046GNR1 vs MRFE6S9046NR1 Comparison

Detailed side-by-side comparison of MRFE6S9046GNR1 by NXP Semiconductors and MRFE6S9046NR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRFE6S9046GNR1 MRFE6S9046GNR1 - 35.5W 960MHz 28V RF Power MOSFET | NXP

MRFE6S9046GNR1 - 35.5W 960MHz 28V RF Power MOSFET | NXP

MRFE6S9046GNR1 ✓ Active
NXP Semiconductors
MRFE6S9046NR1 MRFE6S9046NR1 - 45W RF Power MOSFET 920-960 MHz | NXP

MRFE6S9046NR1 - 45W RF Power MOSFET 920-960 MHz | NXP

MRFE6S9046NR1 ✓ Active

Specification Comparison

Parameter MRFE6S9046GNR1 MRFE6S9046NR1
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $18.95 $26.40
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale)
Part Number MRFE6S9046GNR1 MRFE6S9046NR1
Transistor Type N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel Enhancement-Mode Lateral
Technology HV6E lateral MOSFET —
Frequency Band 920 to 960 MHz —
Test Frequency 960 MHz —
Drain Voltage (VDD) 28 V (typical) —
Output Power (Pout, CW) 35.5 W —
Power Gain (Gp) 19 dB —
Drain Efficiency [DATA_NEEDED: drain efficiency %] —
Quiescent Drain Current (IDQ) 300 mA —
Input Bias Voltage Range [DATA_NEEDED: VGS range] —
Package / Case TO-270 WB-4 (Case 1486-03, Style 1), plastic overmold TO-270 WB-4 (CASE 1486-03, Style 1), plastic over-molded ceramic
Mounting Type Surface Mount (Gull-wing leads) Surface Mount / Flange Mount
Operating Temperature Range [DATA_NEEDED: operating temp range] —
Storage Temperature Range [DATA_NEEDED: storage temp range] —
Moisture Sensitivity Level (MSL) [DATA_NEEDED: MSL rating] —
RoHS Status Compliant (lead-free) Compliant (per DigiKey listing)
Halogen Free [DATA_NEEDED: halogen-free status] —
Frequency Range — 920 MHz to 960 MHz
Output Power (CW) — 35.5 W typical at 960 MHz, 28 V
Power Gain — 19 dB typical at 960 MHz
Drain-Source Voltage (Vds max) — 66 V rated
Operating Drain Voltage — 28 V nominal
Test Current (Quiescent) — 300 mA
Pin Count — 5 (Drain, Gate, Source x2, NC)
Application — GSM / GSM EDGE base station, CDMA, multicarrier amplifier
Operating Temperature — [DATA_NEEDED: operating temperature range]
Lead-Free Status — Lead Free (per distributor data)

Datasheets & Resources

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