MRFE6S9046GNR1 vs MRFE6S9046NR1 Vergleich

Detaillierter Direktvergleich von MRFE6S9046GNR1 von NXP Semiconductors und MRFE6S9046NR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRFE6S9046GNR1 MRFE6S9046GNR1 - 35.5W 960MHz 28V RF Power MOSFET | NXP

MRFE6S9046GNR1 - 35.5W 960MHz 28V RF Power MOSFET | NXP

MRFE6S9046GNR1 ✓ Aktiv
NXP Semiconductors
MRFE6S9046NR1 MRFE6S9046NR1 - 45W RF Power MOSFET 920-960 MHz | NXP

MRFE6S9046NR1 - 45W RF Power MOSFET 920-960 MHz | NXP

MRFE6S9046NR1 ✓ Aktiv

Spezifikationsvergleich

Parameter MRFE6S9046GNR1 MRFE6S9046NR1
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $18,95 $26,40
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale)
Part Number MRFE6S9046GNR1 MRFE6S9046NR1
Transistortyp N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel Enhancement-Mode Lateral
Technology HV6E lateral MOSFET —
Frequency Band 920 to 960 MHz —
Test Frequency 960 MHz —
Drain Voltage (VDD) 28 V (typical) —
Output Power (Pout, CW) 35.5 W —
Power Gain (Gp) 19 dB —
Drain Efficiency [DATA_NEEDED: drain efficiency %] —
Quiescent Drain Current (IDQ) 300 mA —
Input Bias Voltage Range [DATA_NEEDED: VGS range] —
Gehäuse / Bauform TO-270 WB-4 (Case 1486-03, Style 1), plastic overmold TO-270 WB-4 (CASE 1486-03, Style 1), plastic over-molded ceramic
Montageart Surface Mount (Gull-wing leads) Surface Mount / Flange Mount
Betriebstemperaturbereich [DATA_NEEDED: operating temp range] —
Storage Temperature Range [DATA_NEEDED: storage temp range] —
Feuchtigkeitsempfindlichkeitsgrad (MSL) [DATA_NEEDED: MSL rating] —
RoHS-Status Compliant (lead-free) Compliant (per DigiKey listing)
Halogenfrei [DATA_NEEDED: halogen-free status] —
Frequency Range — 920 MHz to 960 MHz
Output Power (CW) — 35.5 W typical at 960 MHz, 28 V
Power Gain — 19 dB typical at 960 MHz
Drain-Source Voltage (Vds max) — 66 V rated
Operating Drain Voltage — 28 V nominal
Test Current (Quiescent) — 300 mA
Pin-Anzahl — 5 (Drain, Gate, Source x2, NC)
Application — GSM / GSM EDGE base station, CDMA, multicarrier amplifier
Betriebstemperatur — [DATA_NEEDED: operating temperature range]
Lead-Free Status — Lead Free (per distributor data)

Datenblätter & Ressourcen

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