MRFE6S9046GNR1 vs MRFE6S9046NR1 Comparación
Comparación detallada lado a lado de MRFE6S9046GNR1 por NXP Semiconductors y MRFE6S9046NR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MRFE6S9046GNR1 | MRFE6S9046NR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $18,95 | $26,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRFE6S9046GNR1 | MRFE6S9046NR1 |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral |
| Technology | HV6E lateral MOSFET | — |
| Frequency Band | 920 to 960 MHz | — |
| Test Frequency | 960 MHz | — |
| Drain Voltage (VDD) | 28 V (typical) | — |
| Output Power (Pout, CW) | 35.5 W | — |
| Power Gain (Gp) | 19 dB | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| Quiescent Drain Current (IDQ) | 300 mA | — |
| Input Bias Voltage Range | [DATA_NEEDED: VGS range] | — |
| Encapsulado / Carcasa | TO-270 WB-4 (Case 1486-03, Style 1), plastic overmold | TO-270 WB-4 (CASE 1486-03, Style 1), plastic over-molded ceramic |
| Tipo de montaje | Surface Mount (Gull-wing leads) | Surface Mount / Flange Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temp range] | — |
| Storage Temperature Range | [DATA_NEEDED: storage temp range] | — |
| Nivel de sensibilidad a la humedad (MSL) | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | Compliant (lead-free) | Compliant (per DigiKey listing) |
| Sin halógenos | [DATA_NEEDED: halogen-free status] | — |
| Frequency Range | — | 920 MHz to 960 MHz |
| Output Power (CW) | — | 35.5 W typical at 960 MHz, 28 V |
| Power Gain | — | 19 dB typical at 960 MHz |
| Drain-Source Voltage (Vds max) | — | 66 V rated |
| Operating Drain Voltage | — | 28 V nominal |
| Test Current (Quiescent) | — | 300 mA |
| Recuento de pines | — | 5 (Drain, Gate, Source x2, NC) |
| Application | — | GSM / GSM EDGE base station, CDMA, multicarrier amplifier |
| Temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Lead-Free Status | — | Lead Free (per distributor data) |