MRFE6S9046GNR1 vs MRFE6S9046NR1 Comparaison
Comparaison détaillée côte à côte de MRFE6S9046GNR1 par NXP Semiconductors et MRFE6S9046NR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRFE6S9046GNR1 | MRFE6S9046NR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $18,95 | $26,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRFE6S9046GNR1 | MRFE6S9046NR1 |
| Type de transistor | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral |
| Technology | HV6E lateral MOSFET | — |
| Frequency Band | 920 to 960 MHz | — |
| Test Frequency | 960 MHz | — |
| Drain Voltage (VDD) | 28 V (typical) | — |
| Output Power (Pout, CW) | 35.5 W | — |
| Power Gain (Gp) | 19 dB | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| Quiescent Drain Current (IDQ) | 300 mA | — |
| Input Bias Voltage Range | [DATA_NEEDED: VGS range] | — |
| Boîtier / Format | TO-270 WB-4 (Case 1486-03, Style 1), plastic overmold | TO-270 WB-4 (CASE 1486-03, Style 1), plastic over-molded ceramic |
| Type de montage | Surface Mount (Gull-wing leads) | Surface Mount / Flange Mount |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temp range] | — |
| Storage Temperature Range | [DATA_NEEDED: storage temp range] | — |
| Niveau de sensibilité à l'humidité (MSL) | [DATA_NEEDED: MSL rating] | — |
| Statut RoHS | Compliant (lead-free) | Compliant (per DigiKey listing) |
| Sans halogène | [DATA_NEEDED: halogen-free status] | — |
| Frequency Range | — | 920 MHz to 960 MHz |
| Output Power (CW) | — | 35.5 W typical at 960 MHz, 28 V |
| Power Gain | — | 19 dB typical at 960 MHz |
| Drain-Source Voltage (Vds max) | — | 66 V rated |
| Operating Drain Voltage | — | 28 V nominal |
| Test Current (Quiescent) | — | 300 mA |
| Nombre de broches | — | 5 (Drain, Gate, Source x2, NC) |
| Application | — | GSM / GSM EDGE base station, CDMA, multicarrier amplifier |
| Température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |
| Lead-Free Status | — | Lead Free (per distributor data) |