MRFG35003NR5 vs MRFG35010NR5 Comparison

Detailed side-by-side comparison of MRFG35003NR5 by NXP Semiconductors and MRFG35010NR5 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRFG35003NR5 MRFG35003NR5 - 3W 3.55GHz pHEMT RF Power FET | NXP

MRFG35003NR5 - 3W 3.55GHz pHEMT RF Power FET | NXP

MRFG35003NR5 Obsolete
NXP Semiconductors
MRFG35010NR5 MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 Obsolete

Specification Comparison

Parameter MRFG35003NR5 MRFG35010NR5
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Obsolete Obsolete
Stock Status In Stock In Stock
Unit Price (USD) $10.95 $9.60
Transistor Type pHEMT FET pHEMT FET
Technology GaAs pHEMT GaAs pHEMT
Frequency 3.55 GHz (test) 3.55 GHz
Frequency Range Up to 3.6 GHz —
Drain-Source Rated Voltage 15 V —
Continuous Drain Current 1.3 A —
Test Drain Voltage 12 V —
Test Drain Current 55 mA —
Power Gain (typ) 11.5 dB @ 3.55 GHz —
Output Power 3 W —
Package / Case PLD-1.5 (ceramic flange, bolt-down) PLD-1.5
Supplier Device Package PLD-1.5 PLD-1.5
Mounting Type Chassis / flange mount with screws Surface Mount
Configuration Single, unmatched die Single, unmatched
Operating Class Class AB linear —
Lead Free Status Lead-free (per NXP product page) [DATA_NEEDED: lead free status]
Packaging Tape & Reel (R5 suffix) —
Operating Frequency Range — Up to 3.6 GHz
Gain — 10 dB (typical at 3.55 GHz)
Output Power (CW) — 9 W
Voltage - Rated — 15 V
Voltage - Test — 12 V
Current - Test — 180 mA
Current Rating — 2.9 A
Application — WLL/MMDS/BWA/UMTS driver stages
RoHS Status — [DATA_NEEDED: rohs status]

Datasheets & Resources

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