MRFG35003NR5 vs MRFG35010NR5 对比

详细并排对比 MRFG35003NR5 出自 NXP Semiconductors 和 MRFG35010NR5 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRFG35003NR5 MRFG35003NR5 - 3W 3.55GHz pHEMT RF Power FET | NXP

MRFG35003NR5 - 3W 3.55GHz pHEMT RF Power FET | NXP

MRFG35003NR5 Obsolete
NXP Semiconductors
MRFG35010NR5 MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 Obsolete

规格对比

参数 MRFG35003NR5 MRFG35010NR5
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 Obsolete Obsolete
库存状态 有库存 有库存
单价(USD) $10.95 $9.60
晶体管类型 pHEMT FET pHEMT FET
Technology GaAs pHEMT GaAs pHEMT
Frequency 3.55 GHz (test) 3.55 GHz
Frequency Range Up to 3.6 GHz —
Drain-Source Rated Voltage 15 V —
Continuous Drain Current 1.3 A —
Test Drain Voltage 12 V —
Test Drain Current 55 mA —
Power Gain (typ) 11.5 dB @ 3.55 GHz —
Output Power 3 W —
封装 / 外壳 PLD-1.5 (ceramic flange, bolt-down) PLD-1.5
Supplier Device Package PLD-1.5 PLD-1.5
安装类型 Chassis / flange mount with screws Surface Mount
Configuration Single, unmatched die Single, unmatched
Operating Class Class AB linear —
Lead Free Status Lead-free (per NXP product page) [DATA_NEEDED: lead free status]
Packaging Tape & Reel (R5 suffix) —
Operating Frequency Range — Up to 3.6 GHz
Gain — 10 dB (typical at 3.55 GHz)
Output Power (CW) — 9 W
Voltage - Rated — 15 V
Voltage - Test — 12 V
Current - Test — 180 mA
Current Rating — 2.9 A
Application — WLL/MMDS/BWA/UMTS driver stages
RoHS 状态 — [DATA_NEEDED: rohs status]

数据手册与资源

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