MRFG35003NR5 vs MRFG35010NR5 Vergleich

Detaillierter Direktvergleich von MRFG35003NR5 von NXP Semiconductors und MRFG35010NR5 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRFG35003NR5 MRFG35003NR5 - 3W 3.55GHz pHEMT RF Power FET | NXP

MRFG35003NR5 - 3W 3.55GHz pHEMT RF Power FET | NXP

MRFG35003NR5 Obsolete
NXP Semiconductors
MRFG35010NR5 MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 Obsolete

Spezifikationsvergleich

Parameter MRFG35003NR5 MRFG35010NR5
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Obsolete Obsolete
Lagerstatus In Stock In Stock
Stückpreis (USD) $10,95 $9,60
Transistortyp pHEMT FET pHEMT FET
Technology GaAs pHEMT GaAs pHEMT
Frequency 3.55 GHz (test) 3.55 GHz
Frequency Range Up to 3.6 GHz —
Drain-Source Rated Voltage 15 V —
Continuous Drain Current 1.3 A —
Test Drain Voltage 12 V —
Test Drain Current 55 mA —
Power Gain (typ) 11.5 dB @ 3.55 GHz —
Output Power 3 W —
Gehäuse / Bauform PLD-1.5 (ceramic flange, bolt-down) PLD-1.5
Supplier Device Package PLD-1.5 PLD-1.5
Montageart Chassis / flange mount with screws Surface Mount
Configuration Single, unmatched die Single, unmatched
Operating Class Class AB linear —
Lead Free Status Lead-free (per NXP product page) [DATA_NEEDED: lead free status]
Packaging Tape & Reel (R5 suffix) —
Operating Frequency Range — Up to 3.6 GHz
Gain — 10 dB (typical at 3.55 GHz)
Output Power (CW) — 9 W
Voltage - Rated — 15 V
Voltage - Test — 12 V
Current - Test — 180 mA
Current Rating — 2.9 A
Application — WLL/MMDS/BWA/UMTS driver stages
RoHS-Status — [DATA_NEEDED: rohs status]

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern