MT40A1G8SA-062E vs K4A8G085WC-BCTD Comparison

Detailed side-by-side comparison of MT40A1G8SA-062E by Micron Technology and K4A8G085WC-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A1G8SA-062E

MT40A1G8SA-062E - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A1G8SA-062E βœ“ Active
Samsung Electronics
K4A8G085WC-BCTD

K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD ⚠ Last Time Buy

Specification Comparison

Parameter MT40A1G8SA-062E K4A8G085WC-BCTD
Brand Micron Technology Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Last_time_buy
Stock Status In Stock In Stock
Unit Price (USD) $6.05 $50.85
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 8 Gb
Organization 1G x 8 1G x 8
Data Rate 3200 MT/s (DDR4-3200) 2666 Mbps (PC4-2133)
Clock Frequency 1.6 GHz β€”
Access Time (CAS Latency) CL22 at 3200 MT/s β€”
Row Access Time 19 ns β€”
VDD / VDDQ 1.2 V +/-60 mV β€”
VPP 2.5 V, -125 mV, +250 mV β€”
Internal Banks 16 banks (4 bank groups x 4 banks) β€”
Refresh 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) β€”
Operating Temperature 0C to +95C (CT range; IT: -40C to +95C) 0C to +95C
I/O Type 1.2 V pseudo open-drain β€”
Burst Length BL8, BC4 (burst chop) 8 (chop 4)
Package 78-ball FBGA (7.5 x 11 mm) 78-ball FBGA (78FBGA)
Mounting Type Surface Mount Surface Mount
Features Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ β€”
Supply Voltage (VDD/VDDQ) β€” 1.2 V (1.14 V to 1.26 V)
Ball Pitch β€” 0.8 mm
Standard Operating Temp Range β€” 0C to +85C
Auto Precharge β€” Yes
Asynchronous Reset β€” Yes
CRC Function β€” Yes
ZQ Calibration β€” Yes
Dynamic ODT β€” Yes
Data Mask β€” Yes
Interface Type β€” Synchronous, parallel
RoHS Status β€” [DATA_NEEDED: RoHS status]

Datasheets & Resources

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