MT40A256M16LY-062E vs K4A4G165WG-BCWE Comparison
Detailed side-by-side comparison of MT40A256M16LY-062E by Micron Technology and K4A4G165WG-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A4G165WG-BCWE ✓ ActiveSpecification Comparison
| Parameter | MT40A256M16LY-062E | K4A4G165WG-BCWE |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.30 | $16.90 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Memory Size | 4 Gbit | 4 Gbit |
| Organization | 256M x16 | — |
| Interface | Parallel | Parallel |
| Clock Frequency | 1.6 GHz | [DATA_NEEDED: clock frequency / tCK range] |
| Access Time (tAA) | 19 ns | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Data Rate Class | DDR4-2666 (062E speed grade) | — |
| Package | 96-FBGA (7.5 x 13.5 mm) | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature (IT variant) | -40C to +95C | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Write Leveling | Yes | — |
| CRC (Command/Address) | Yes | — |
| Data Mask (DM) | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| FBGA Code | D9XSG (AUT variant) | — |
| RoHS Status | Compliant (F = RoHS/lead-free finish) | Compliant (per JLCPCB listing) |
| Memory Organization | — | 256M x 16 |
| Data Rate | — | 3200 Mbps |
| Access Time | — | 19 ns |
| Supply Voltage | — | 1.2 V |
| Operating Temperature | — | 0C to +85C |
| Memory Format | — | DRAM |
| Technology | — | DDR4 |
| Product Status | — | Active |
| CAS Latency | — | [DATA_NEEDED: CAS latency] |
| Refresh Rate | — | [DATA_NEEDED: refresh interval] |