MT40A256M16LY-062E vs K4A4G165WG-BCWE 对比
详细并排对比 MT40A256M16LY-062E 出自 Micron Technology 和 K4A4G165WG-BCWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A256M16LY-062E | K4A4G165WG-BCWE |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.30 | $16.90 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| 存储容量 | 4 Gbit | 4 Gbit |
| 存储组织 | 256M x16 | — |
| 接口 | Parallel | Parallel |
| Clock Frequency | 1.6 GHz | [DATA_NEEDED: clock frequency / tCK range] |
| Access Time (tAA) | 19 ns | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Data Rate Class | DDR4-2666 (062E speed grade) | — |
| 封装 | 96-FBGA (7.5 x 13.5 mm) | FBGA-96 |
| 安装类型 | Surface Mount | Surface Mount |
| Operating Temperature (IT variant) | -40C to +95C | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Write Leveling | Yes | — |
| CRC (Command/Address) | Yes | — |
| Data Mask (DM) | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| FBGA Code | D9XSG (AUT variant) | — |
| RoHS 状态 | Compliant (F = RoHS/lead-free finish) | Compliant (per JLCPCB listing) |
| Memory Organization | — | 256M x 16 |
| 数据速率 | — | 3200 Mbps |
| Access Time | — | 19 ns |
| 电源电压 | — | 1.2 V |
| 工作温度 | — | 0C to +85C |
| Memory Format | — | DRAM |
| Technology | — | DDR4 |
| Product Status | — | Active |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency] |
| Refresh Rate | — | [DATA_NEEDED: refresh interval] |