MT40A512M16LY-062E-ATE vs K4A8G165WC-BCTD Comparison
Detailed side-by-side comparison of MT40A512M16LY-062E-ATE by Micron Technology and K4A8G165WC-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16LY-062E-ATE - 8Gb DDR4-3200 SDRAM | Micron
MT40A512M16LY-062E-ATE ✓ ActiveSamsung Electronics
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WC-BCTD ✓ ActiveSpecification Comparison
| Parameter | MT40A512M16LY-062E-ATE | K4A8G165WC-BCTD |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $34.10 | $41.20 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s (DDR4-3200) | 2666 Mbps (DDR4-2666) |
| Clock Frequency | 1.6 GHz | 1.333 GHz |
| Access Time | 19 ns | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VPP) | 2.5 V | — |
| Package | 96-ball FBGA (7.5 x 13.5 mm) | 96FBGA (96-ball Fine-Pitch Ball Grid Array) |
| Ball Pitch | 0.8 mm | — |
| Operating Temperature | -40C to +105C (automotive) | 0C to +95C |
| Speed Grade | -062E (0.625 ns tCK) | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| On-Die Termination | Yes (ODT) | — |
| ZQ Calibration | Yes | Yes (240 ohm resistor to GND) |
| Data Mask | Yes (DM) | — |
| Refresh Mode | Auto self-refresh | — |
| Supply Voltage | — | 1.2 V |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Die Revision | — | C-die |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| Data Mask Function | — | Yes |