MT40A512M16LY-062E-ATE vs K4A8G165WC-BCTD 对比
详细并排对比 MT40A512M16LY-062E-ATE 出自 Micron Technology 和 K4A8G165WC-BCTD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A512M16LY-062E-ATE - 8Gb DDR4-3200 SDRAM | Micron
MT40A512M16LY-062E-ATE ✓ 量产中Samsung Electronics
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WC-BCTD ✓ 量产中规格对比
| 参数 | MT40A512M16LY-062E-ATE | K4A8G165WC-BCTD |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $34.10 | $41.20 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| 存储组织 | 512M x 16 | 512M x 16 |
| 数据速率 | 3200 MT/s (DDR4-3200) | 2666 Mbps (DDR4-2666) |
| Clock Frequency | 1.6 GHz | 1.333 GHz |
| Access Time | 19 ns | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VPP) | 2.5 V | — |
| 封装 | 96-ball FBGA (7.5 x 13.5 mm) | 96FBGA (96-ball Fine-Pitch Ball Grid Array) |
| Ball Pitch | 0.8 mm | — |
| 工作温度 | -40C to +105C (automotive) | 0C to +95C |
| Speed Grade | -062E (0.625 ns tCK) | — |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| On-Die Termination | Yes (ODT) | — |
| ZQ Calibration | Yes | Yes (240 ohm resistor to GND) |
| Data Mask | Yes (DM) | — |
| Refresh Mode | Auto self-refresh | — |
| 电源电压 | — | 1.2 V |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Die Revision | — | C-die |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| Data Mask Function | — | Yes |