MT40A512M16LY-075:E vs K4A8G165WB-BCWE Comparison
Detailed side-by-side comparison of MT40A512M16LY-075:E by Micron Technology and K4A8G165WB-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron
MT40A512M16LY-075:E ✓ ActiveSamsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE ✓ ActiveSpecification Comparison
| Parameter | MT40A512M16LY-075:E | K4A8G165WB-BCWE |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.80 | $6.55 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit (512M x 16) | — |
| Data Rate | 2666 MT/s | 3200 Mbps |
| Clock Frequency | 1.33 GHz | — |
| CAS Latency | 19 | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply | 2.5V (-125mV, +250mV) | — |
| Interface | Parallel | Parallel |
| Package | 96-FBGA (7.5x13.5mm) | 96FBGA |
| Operating Temperature Range | 0°C to +95°C | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Internal Banks (x16) | 8 banks (4 groups of 2) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| RoHS | Compliant | — |
| Mounting Type | Surface Mount | Surface Mount |
| Density | — | 8 Gb |
| Organization | — | 512M x 16 |
| Supply Voltage | — | 1.2 V |
| Access Time (CAS Latency) | — | 19 ns |
| Operating Temperature | — | 0C to +85C |
| Burst Length | — | 8 |
| Bank Group Architecture | — | Yes |
| On-Die Termination (ODT) | — | Yes, dynamic ODT with ZQ calibration |
| Functions | — | Auto precharge, asynchronous reset, CRC, data mask |
| RoHS Status | — | Compliant |
| Lead Free | — | Yes |