MT41K256M16TW-107:P vs NT5CC256M16ER-FLNA Comparison
Detailed side-by-side comparison of MT41K256M16TW-107:P by Micron Technology and NT5CC256M16ER-FLNA by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16TW-107:P - 4Gb DDR3L SDRAM 933MHz | Micron
MT41K256M16TW-107:P ✓ ActiveSpecification Comparison
| Parameter | MT41K256M16TW-107:P | NT5CC256M16ER-FLNA |
|---|---|---|
| Brand | Micron Technology | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $16.00 | $22.00 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4Gbit (256M x 16) | — |
| Clock Frequency | 933 MHz | — |
| Data Rate | 1866 MT/s | 1866 Mbps (max) |
| Supply Voltage | 1.35V | 1.35 V (1.283 V to 1.45 V) |
| I/O Voltage | 1.35V | 1.5 V |
| CAS Latency | 13 | Programmable (e.g., 13, 14) |
| tRCD | 20 ns | — |
| tRP | 20 ns | — |
| Burst Length | 8 | 8, 4 (with burst chop) |
| Package | 96-FBGA (8x14mm) | 96-ball TFBGA |
| Operating Temperature | 0°C to +95°C | — |
| Mounting Type | Surface Mount | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | Yes |
| Density | — | 4 Gb |
| Organization | — | 256M x 16 |
| Number of Terminals | — | 96 |
| Operating Temperature Range | — | 0°C to +95°C (commercial/industrial) |
| Number of Banks | — | 8 |
| Refresh | — | Auto and self refresh |
| RoHS | — | Compliant |