NT5AD512M16C4-JR vs MT40A512M16LY-075 Comparison

Detailed side-by-side comparison of NT5AD512M16C4-JR by Nanya Technology and MT40A512M16LY-075 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Nanya Technology
NT5AD512M16C4-JR NT5AD512M16C4-JR - 8Gb DDR4-3200 SDRAM | Nanya Tech

NT5AD512M16C4-JR - 8Gb DDR4-3200 SDRAM | Nanya Tech

NT5AD512M16C4-JR ✓ Active
Micron Technology
MT40A512M16LY-075 MT40A512M16LY-075 - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16LY-075 - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16LY-075 ✓ Active

Specification Comparison

Parameter NT5AD512M16C4-JR MT40A512M16LY-075
Brand Nanya Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $73.75 $27.89
Memory Type DDR4 SDRAM DDR4 SDRAM
Organization 512M x16 512M x 16
Density 8 Gbit 8 Gbit
Supply Voltage (VDD) 1.2 V —
Data Rate 1.6 GHz (DDR4-3200) DDR4-2666
Package TFBGA-96 96-FBGA (7.5x13.5 mm)
Operating Temperature Range 0°C to +95°C 0°C to +95°C
Standby Current 0.023 A (max) —
Number of Terminals 96 —
Auto Self-Refresh Yes —
Built-in Temperature Sensor Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask Yes —
Write Leveling Yes —
Dynamic On-Chip Termination Yes —
ZQ Calibration Yes —
CRC Function Yes —
RoHS Compliant —
Clock Speed — 1.33 GHz
Supply Voltage (VDD/VDDQ) — 1.2V ±60mV
VPP Supply — 2.5V (-125mV, +250mV)
I/O Type — 1.2V pseudo open-drain
Internal Banks (x16) — 8 (2 groups of 4 banks)
Refresh Time at TC -40°C to 85°C — 64ms
Refresh Time at TC >85°C to 95°C — 32ms
Refresh Time at TC >95°C to 105°C — 16ms
Mounting Type — Surface Mount

Datasheets & Resources

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