NT5AD512M16C4-JR vs MT40A512M16LY-075 对比
详细并排对比 NT5AD512M16C4-JR 出自 Nanya Technology 和 MT40A512M16LY-075 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT5AD512M16C4-JR | MT40A512M16LY-075 |
|---|---|---|
| 品牌 | Nanya Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $73.75 | $27.89 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储组织 | 512M x16 | 512M x 16 |
| Density | 8 Gbit | 8 Gbit |
| Supply Voltage (VDD) | 1.2 V | — |
| 数据速率 | 1.6 GHz (DDR4-3200) | DDR4-2666 |
| 封装 | TFBGA-96 | 96-FBGA (7.5x13.5 mm) |
| 工作温度范围 | 0°C to +95°C | 0°C to +95°C |
| Standby Current | 0.023 A (max) | — |
| Number of Terminals | 96 | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | — |
| Clock Speed | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply | — | 2.5V (-125mV, +250mV) |
| I/O Type | — | 1.2V pseudo open-drain |
| Internal Banks (x16) | — | 8 (2 groups of 4 banks) |
| Refresh Time at TC -40°C to 85°C | — | 64ms |
| Refresh Time at TC >85°C to 95°C | — | 32ms |
| Refresh Time at TC >95°C to 105°C | — | 16ms |
| 安装类型 | — | Surface Mount |