NT5CB256M16CP-DIH vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of NT5CB256M16CP-DIH by Nanya Technology and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5CB256M16CP-DIH
NT5CB256M16CP-DIH - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CB256M16CP-DIH β Active
Specification Comparison
| Parameter | NT5CB256M16CP-DIH | K4B4G1646E-BYMA |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $14.32 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (Β±0.075V) | β |
| Data Rate | 1600Mbps (DDR3L-1600) | 1866 Mbps/pin |
| Internal Banks | 8 (BA0-BA2) | β |
| CAS Latency (CL) | 5, 6, 7, 8, 9 | β |
| WRITE Latency (CWL) | 5, 6, 7, 8, 9 | β |
| Interface | SSTL_15 | β |
| Package | 96-ball TFBGA | FBGA-96 |
| Operating Temperature | -40Β°C to +95Β°C (industrial) | 0Β°C to +95Β°C |
| RoHS | Compliant | Compliant |
| REACH | Compliant | β |
| Lead-Free | Yes | β |
| Process Technology | 70nm | β |
| Supply Voltage | β | 1.35 V (1.28 V to 1.575 V) |
| Clock Frequency | β | 933 MHz |
| Operating Current | β | 14 mA |
| Standby Current | β | 2 mA, 3 mA |
| Mounting Type | β | Surface Mount |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| Burst Length | β | [DATA_NEEDED: Burst Length] |
| Number of Pins | β | 96 |