NT5CC256M16CN-FLH vs K4B4G1646E-BYMA Comparison

Detailed side-by-side comparison of NT5CC256M16CN-FLH by Nanya Technology and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Nanya Technology
NT5CC256M16CN-FLH NT5CC256M16CN-FLH - 4Gb DDR3L SDRAM | Nanya Technology

NT5CC256M16CN-FLH - 4Gb DDR3L SDRAM | Nanya Technology

NT5CC256M16CN-FLH ✓ Active
Samsung Electronics
K4B4G1646E-BYMA K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA ✓ Active

Specification Comparison

Parameter NT5CC256M16CN-FLH K4B4G1646E-BYMA
Brand Nanya Technology Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Unit Price (USD) — $14.32
Memory Type DDR3L SDRAM DDR3L SDRAM
Density 4Gb (256M x 16) 4 Gb
Supply Voltage 1.35V (1.283V to 1.45V) 1.35 V (1.28 V to 1.575 V)
Data Rate 1866 Mbps (PC3-14900) 1866 Mbps/pin
I/O Interface 16-bit —
Internal Banks 8 —
Burst Length 8, 4 (with burst chop) [DATA_NEEDED: Burst Length]
CAS Latency 13, 12, 11, 10, 9 [DATA_NEEDED: CAS Latency]
Package 96-ball FBGA FBGA-96
Operating Temperature Range 0°C to +95°C (TC) —
RoHS Compliant Compliant
Lead-Free Yes —
Auto Self-Refresh Supported —
On-Die Termination (ODT) Supported —
ZQ Calibration Supported —
Organization — 256M x 16
Clock Frequency — 933 MHz
Operating Temperature — 0°C to +95°C
Operating Current — 14 mA
Standby Current — 2 mA, 3 mA
Mounting Type — Surface Mount
Number of Pins — 96

Datasheets & Resources

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