NT5CC256M16DP-DI vs H5TC4G63AFR-PBA Comparison
Detailed side-by-side comparison of NT5CC256M16DP-DI by Nanya Technology and H5TC4G63AFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5CC256M16DP-DI
NT5CC256M16DP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CC256M16DP-DI β Active
Specification Comparison
| Parameter | NT5CC256M16DP-DI | H5TC4G63AFR-PBA |
|---|---|---|
| Brand | Nanya Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $3.98 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | β |
| Data Rate | 1600 Mbps/pin (800MHz) | 1866 Mbps (PC3L-14900) |
| Package | VFBGA-96 | 96-ball FBGA |
| Operating Temperature Range | -40Β°C to +95Β°C (industrial) | 0Β°C to +95Β°C (Tcase) |
| CAS Latency | 11, 12, 13 (programmable) | β |
| Burst Length | 8, 4 (with burst chop) | 8 and 4 (with burst chop) |
| Number of Banks | 8 | 8 |
| Interface | Differential clock (CK, CK#) | 16-bit I/O |
| Refresh | Auto-refresh and self-refresh | β |
| On-Die Termination | Yes (ODT) | β |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | β |
| Supply Voltage (VDD/VDDQ) | β | 1.35V |
| Ball Pitch | β | 0.8mm |
| CAS Latency (CL) | β | 11, 12, 13 |
| On-Die Termination (ODT) | β | Yes |
| ZQ Calibration | β | Yes |
| Write Leveling | β | Yes |
| Auto Self-Refresh | β | Yes |
| Partial Array Self-Refresh | β | Yes |