NT5CC256M16DP-DI vs H5TC4G63AFR-PBA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CC256M16DP-DI sa pamamagitan ng Nanya Technology at H5TC4G63AFR-PBA sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | NT5CC256M16DP-DI | H5TC4G63AFR-PBA |
|---|---|---|
| Brand | Nanya Technology | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $3.98 |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Volte ng Pagbibigay | 1.35V | — |
| Rate ng Data | 1600 Mbps/pin (800MHz) | 1866 Mbps (PC3L-14900) |
| Packhaging | VFBGA-96 | 96-ball FBGA |
| Hanay ng Temperature na Operasyon | -40°C to +95°C (industrial) | 0°C to +95°C (Tcase) |
| Latensya ng CAS | 11, 12, 13 (programmable) | — |
| Burst Length | 8, 4 (with burst chop) | 8 and 4 (with burst chop) |
| Number of Banks | 8 | 8 |
| Interface | Differential clock (CK, CK#) | 16-bit I/O |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| CAS Latency (CL) | — | 11, 12, 13 |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |