NT5CC256M16DP-DI vs NT5CC256M16CP-DI Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CC256M16DP-DI sa pamamagitan ng Nanya Technology at NT5CC256M16CP-DI sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | NT5CC256M16DP-DI | NT5CC256M16CP-DI |
|---|---|---|
| Brand | Nanya Technology | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| Organisasyon | 256M x 16 | 256M x 16 |
| Volte ng Pagbibigay | 1.35V | 1.35V (1.283V to 1.45V) |
| Rate ng Data | 1600 Mbps/pin (800MHz) | — |
| Packhaging | VFBGA-96 | VFBGA-96 |
| Hanay ng Temperature na Operasyon | -40°C to +95°C (industrial) | — |
| Latensya ng CAS | 11, 12, 13 (programmable) | — |
| Burst Length | 8, 4 (with burst chop) | 8, 4 |
| Number of Banks | 8 | — |
| Interface | Differential clock (CK, CK#) | Differential clock (CK, CK#) |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes (ODT) | Yes (programmable) |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Total Density | — | 4Gb |
| Speed Grade | — | DDR3-1600 (CL11) |
| CAS Latency (CL) | — | 5, 6, 7, 8, 9, 10, 11 |
| Write Latency (CWL) | — | 5, 6, 7, 8, 9 |
| Internal Banks | — | 8 |
| Temperature na Operasyon | — | 0C to +95C (Tc) [DATA_NEEDED: exact range] |
| Process Technology | — | 70nm |