NT5CC256M16DP-DI vs NT5CC256M16CP-DI 比較
詳細並排比較 NT5CC256M16DP-DI 由 Nanya Technology 與 NT5CC256M16CP-DI 由 Nanya Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | NT5CC256M16DP-DI | NT5CC256M16CP-DI |
|---|---|---|
| 品牌 | Nanya Technology | Nanya Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| 組織 | 256M x 16 | 256M x 16 |
| 供應電壓 | 1.35V | 1.35V (1.283V to 1.45V) |
| 資料速率 | 1600 Mbps/pin (800MHz) | — |
| 封裝 | VFBGA-96 | VFBGA-96 |
| 工作溫度範圍 | -40°C to +95°C (industrial) | — |
| CAS 延遲 | 11, 12, 13 (programmable) | — |
| Burst Length | 8, 4 (with burst chop) | 8, 4 |
| Number of Banks | 8 | — |
| 介面 | Differential clock (CK, CK#) | Differential clock (CK, CK#) |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes (ODT) | Yes (programmable) |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Total Density | — | 4Gb |
| Speed Grade | — | DDR3-1600 (CL11) |
| CAS Latency (CL) | — | 5, 6, 7, 8, 9, 10, 11 |
| Write Latency (CWL) | — | 5, 6, 7, 8, 9 |
| Internal Banks | — | 8 |
| 工作溫度 | — | 0C to +95C (Tc) [DATA_NEEDED: exact range] |
| Process Technology | — | 70nm |