NT5CC256M16DP-DI vs NT5CC256M16CP-DI Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5CC256M16DP-DI disebabkan oleh Nanya Technology dan NT5CC256M16CP-DI disebabkan oleh Nanya Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | NT5CC256M16DP-DI | NT5CC256M16CP-DI |
|---|---|---|
| Merek | Nanya Technology | Nanya Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35V | 1.35V (1.283V to 1.45V) |
| Kadar Data | 1600 Mbps/pin (800MHz) | — |
| Kemasan | VFBGA-96 | VFBGA-96 |
| Gambaran Suhu Operasi | -40°C to +95°C (industrial) | — |
| Latensi CAS | 11, 12, 13 (programmable) | — |
| Burst Length | 8, 4 (with burst chop) | 8, 4 |
| Number of Banks | 8 | — |
| Antaramuka | Differential clock (CK, CK#) | Differential clock (CK, CK#) |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes (ODT) | Yes (programmable) |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Total Density | — | 4Gb |
| Speed Grade | — | DDR3-1600 (CL11) |
| CAS Latency (CL) | — | 5, 6, 7, 8, 9, 10, 11 |
| Write Latency (CWL) | — | 5, 6, 7, 8, 9 |
| Internal Banks | — | 8 |
| Suhu Operasi | — | 0C to +95C (Tc) [DATA_NEEDED: exact range] |
| Process Technology | — | 70nm |