YZ48G08V-F9HPI-M vs MT40A1G8SA-062E Comparison

Detailed side-by-side comparison of YZ48G08V-F9HPI-M by Loongtion and MT40A1G8SA-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Loongtion
YZ48G08V-F9HPI-M

YZ48G08V-F9HPI-M - 8Gb DDR4 SDRAM, 3200 MT/s | Loongtion

YZ48G08V-F9HPI-M βœ“ Active
Micron Technology
MT40A1G8SA-062E

MT40A1G8SA-062E - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A1G8SA-062E βœ“ Active

Specification Comparison

Parameter YZ48G08V-F9HPI-M MT40A1G8SA-062E
Brand Loongtion Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $7.20 $6.05
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gbit
Organization 1G x 8 1G x 8
Data Rate 3200 MT/s 3200 MT/s (DDR4-3200)
Supply Voltage 1.2 V β€”
Operating Temperature Range -40Β°C to +85Β°C β€”
Package Type FBGA78 β€”
Mounting Type Surface Mount Surface Mount
Interface Parallel β€”
CAS Latency [DATA_NEEDED: CAS Latency] β€”
Row Cycle Time (tRC) [DATA_NEEDED: tRC] β€”
Refresh Cycle Time (tRFC) [DATA_NEEDED: tRFC] β€”
RoHS Status Compliant β€”
REACH Status Compliant β€”
AEC-Q100 Not Applicable β€”
Clock Frequency β€” 1.6 GHz
Access Time (CAS Latency) β€” CL22 at 3200 MT/s
Row Access Time β€” 19 ns
VDD / VDDQ β€” 1.2 V +/-60 mV
VPP β€” 2.5 V, -125 mV, +250 mV
Internal Banks β€” 16 banks (4 bank groups x 4 banks)
Refresh β€” 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C)
Operating Temperature β€” 0C to +95C (CT range; IT: -40C to +95C)
I/O Type β€” 1.2 V pseudo open-drain
Burst Length β€” BL8, BC4 (burst chop)
Package β€” 78-ball FBGA (7.5 x 11 mm)
Features β€” Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ

Datasheets & Resources

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