YZ48G08V-F9HPI-M vs MT40A1G8SA-062E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci YZ48G08V-F9HPI-M disebabkan oleh Loongtion dan MT40A1G8SA-062E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | YZ48G08V-F9HPI-M | MT40A1G8SA-062E |
|---|---|---|
| Merek | Loongtion | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organisasi | 1G x 8 | 1G x 8 |
| Kadar Data | 3200 MT/s | 3200 MT/s (DDR4-3200) |
| Tegangan Pemberi Arus | 1.2 V | — |
| Gambaran Suhu Operasi | -40°C to +85°C | — |
| Package Type | FBGA78 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | Parallel | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Row Cycle Time (tRC) | [DATA_NEEDED: tRC] | — |
| Refresh Cycle Time (tRFC) | [DATA_NEEDED: tRFC] | — |
| Status RoHS | Compliant | — |
| REACH Status | Compliant | — |
| AEC-Q100 | Not Applicable | — |
| Clock Frequency | — | 1.6 GHz |
| Access Time (CAS Latency) | — | CL22 at 3200 MT/s |
| Row Access Time | — | 19 ns |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV, +250 mV |
| Internal Banks | — | 16 banks (4 bank groups x 4 banks) |
| Refresh | — | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) |
| Suhu Operasi | — | 0C to +95C (CT range; IT: -40C to +95C) |
| I/O Type | — | 1.2 V pseudo open-drain |
| Burst Length | — | BL8, BC4 (burst chop) |
| Kemasan | — | 78-ball FBGA (7.5 x 11 mm) |
| Ciri-ciri | — | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ |