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K4B4G1646D-BCMA0 - 4Gb DDR3 SDRAM 256Mx16 | Samsung
K4B4G1646D-BCMA0

K4B4G1646D-BCMA0 - 4Gb DDR3 SDRAM 256Mx16 | Samsung

The Samsung K4B4G1646D-BCMA0 is a 4Gb DDR3 SDRAM organized as 256M x 16, operating at 1.5V with a data rate of 1866 Mbps. It comes in a 96-ball FBGA package, designed for high-density memory applications in computing, networking, and consumer electronics. This device is part of Samsung's D-die DDR3 family, offering reliable performance and compatibility with DDR3-1866 memory controllers. DDR3 SDRAM (Double Data Rate Type 3 Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the data rate compared to DDR2. It features a prefetch buffer of 8n, enabling high bandwidth while operating at lower voltages (1.5V) than previous generations. DDR3 is widely used in PCs, servers, and embedded systems where high speed and capacity are required. Key features include a 256M x 16 organization, 1866 Mbps data rate, and 1.5V supply voltage. The device supports auto precharge, asynchronous reset, ZQ calibration, data mask, and dynamic on-chip termination (DTC), enhancing signal integrity and system reliability. The 96-ball FBGA package provides a compact footprint suitable for space-constrained designs. Technically, the K4B4G1646D-BCMA0 utilizes Samsung's advanced DRAM process technology, ensuring low power consumption and high-speed operation. The D-die revision offers improved timing margins and reduced latency compared to earlier dies. The device operates over a temperature range of 0°C to 85°C, making it suitable for commercial and industrial applications. Typical applications include main memory in laptops and desktops, networking equipment such as routers and switches, and embedded systems like set-top boxes and industrial controllers. Its high density and speed make it ideal for applications requiring large memory footprints and fast data access. When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device is RoHS compliant and halogen-free, meeting environmental standards.

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K4B4G1646D-BCNB0 - 4Gb DDR3L SDRAM 2133Mbps | Samsung
K4B4G1646D-BCNB0

K4B4G1646D-BCNB0 - 4Gb DDR3L SDRAM 2133Mbps | Samsung

The Samsung K4B4G1646D-BCNB0 is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at a data rate of 2133 Mbps per pin. It is housed in a 96-ball FBGA package and is lead-free and halogen-free, compliant with RoHS. This memory device is designed for high-speed double-data-rate transfer, supporting DDR3L-2133 with a supply voltage of 1.35V, making it suitable for low-power applications. DDR3L SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock signal, effectively doubling the data rate. DDR3L is commonly used in mobile devices, embedded systems, and servers where power efficiency is critical. Key features include a 4Gb density, 256M x 16 organization, 2133 Mbps data rate, and 1.35V supply voltage. The device supports programmable CAS latency, on-die termination (ODT), and internal self-calibration, ensuring signal integrity and reliable operation. The 96-ball FBGA package offers a compact footprint suitable for space-constrained designs. Technically, the K4B4G1646D-BCNB0 utilizes Samsung's advanced DRAM process technology, providing high-speed performance with low power consumption. It includes features such as posted CAS, programmable CWL, and asynchronous reset, which enhance system flexibility and reliability. The device operates over a temperature range of 0°C to 85°C, making it suitable for commercial applications. Typical applications include laptops, servers, networking equipment, and embedded systems requiring high-density, low-power memory. Its 1.35V operation makes it ideal for battery-powered devices where power efficiency is paramount. When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and proper termination for the address/control lines.

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K4B4G1646D-BFMA - 4Gb DDR3 SDRAM x16 96FBGA | Samsung
K4B4G1646D-BFMA

K4B4G1646D-BFMA - 4Gb DDR3 SDRAM x16 96FBGA | Samsung

The Samsung K4B4G1646D-BFMA is a 4Gb (256M x 16) DDR3 SDRAM device in a 96-ball FBGA package, designed for high-performance computing, mobile, and consumer applications. It operates at a data rate of 1866 Mbps (DDR3-1866) with a supply voltage of 1.5V, and is lead-free and halogen-free (RoHS compliant). DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the data rate of its predecessor DDR2. It is widely used in PCs, servers, and embedded systems due to its high bandwidth and low power consumption. The K4B4G1646D-BFMA is part of Samsung's D-die family, offering improved performance and reliability. Key features include a 16-bit I/O width, 8 internal banks, and support for burst lengths of 8 and 4 (with burst chop). It features on-die termination (ODT), programmable CAS latency, and a temperature-compensated self-refresh (TCSR) mode. The device is packaged in a 96-ball FBGA (Fine-Pitch Ball Grid Array) with a 0.8mm ball pitch, enabling compact PCB designs. The K4B4G1646D-BFMA uses a 4Gb D-die architecture with a 1.5V core and I/O supply, achieving a typical operating current of [DATA_NEEDED: IDD] and standby current of [DATA_NEEDED: IDD2]. It supports a wide operating temperature range of 0°C to 95°C (case temperature), making it suitable for industrial and consumer environments. Typical applications include DDR3 memory modules for desktop and laptop computers, networking equipment, set-top boxes, and automotive infotainment systems. Its high density and speed make it ideal for systems requiring large memory capacity with moderate power consumption. When designing with this device, ensure proper signal integrity by following the layout guidelines in the datasheet, including controlled impedance traces and adequate decoupling capacitors near the VDD and VDDQ pins. The device requires a 1.5V supply and a separate VREFCA and VREFDQ reference voltage, which should be generated with low-noise sources.

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K4B4G1646D-BHMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646D-BHMA

K4B4G1646D-BHMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung

The Samsung K4B4G1646D-BHMA is a 4Gb DDR3L SDRAM device organized as 256M x 16, operating at 1.35V with a data rate of 1866 Mbps. It is housed in a 96-ball FBGA package, designed for high-density memory applications in embedded systems, computing platforms, and networking equipment. This D-die DDR3L SDRAM is lead-free and halogen-free, RoHS compliant, and supports industrial temperature ranges. DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high data rates. DDR3L is commonly used in mobile devices, embedded systems, and servers where power efficiency is critical. Key features include a 4Gb density, 256M x 16 organization, 1866 Mbps data rate, and 1.35V operation. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also features auto refresh and self refresh modes, and is compatible with JEDEC DDR3L standards. The 96-ball FBGA package provides a compact footprint suitable for space-constrained designs. Technically, the K4B4G1646D-BHMA uses a D-die process, which offers improved performance and power characteristics compared to earlier dies. It supports DLL (Delay-Locked Loop) enabled mode for precise timing, and includes features like write leveling and read leveling for signal integrity. The device operates over a temperature range of -40°C to +95°C (TC), making it suitable for industrial applications. Typical applications include personal computing devices, mobile phones, tablets, digital cameras, printers, networking equipment, industrial machinery, medical devices, automotive electronics, and solid-state drives. Its low voltage and high density make it ideal for power-sensitive portable devices and high-performance computing platforms. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 1866 Mbps. Also, verify the timing parameters for your specific application, as DDR3L timing is critical for reliable operation.

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K4B4G1646D-BMH9 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BMH9

K4B4G1646D-BMH9 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

The Samsung K4B4G1646D-BMH9 is a 4Gb DDR3L SDRAM device organized as 256M x 16 bits across 8 internal banks, designed for high-speed data transfer up to 2133Mb/s per pin. It operates at a low voltage of 1.35V, reducing power consumption by up to 20% compared to standard DDR3 (1.5V), making it ideal for power-sensitive applications. The device is housed in a 96-ball FBGA package (9x13mm) with lead-free and halogen-free construction, compliant with RoHS standards. DDR3L SDRAM is a type of dynamic random-access memory that uses double data rate architecture to transfer data on both edges of the clock signal, effectively doubling the data rate. It is part of the DDR3 family, which is a successor to DDR2 and offers higher bandwidth and lower power consumption. DDR3L specifically operates at 1.35V, distinguishing it from standard DDR3 (1.5V) and enabling its use in mobile and embedded systems where power efficiency is critical. Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration for signal integrity. The device supports burst lengths of 8 and 4, and includes auto-refresh and self-refresh modes for power management. The 96-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm, suitable for high-density PCB designs. Technically, the K4B4G1646D-BMH9 utilizes Samsung's advanced D-die process technology, which enhances speed and reduces power consumption. The device supports DLL (Delay-Locked Loop) enabled mode for precise timing, and includes features like write leveling and read leveling for improved signal integrity in high-speed systems. The memory is organized with 8 banks, allowing for efficient interleaving and reduced latency. Typical applications include embedded systems, networking equipment, industrial computing, and consumer electronics such as set-top boxes and routers. Its low voltage and high density make it suitable for DDR3L SODIMM modules and on-board memory in space-constrained designs. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 2133Mb/s. The device requires a 1.35V supply and a separate VDDQ supply, which should be regulated accurately.

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K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
K4B4G1646D-BMK0

K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung

The Samsung K4B4G1646D-BMK0 is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at a speed of 1600 Mbps (PC3L-12800). It is a D-die DDR3L device designed for low-voltage operation at 1.35V, making it ideal for power-sensitive applications. The component is housed in a 96-ball FBGA package, specifically the 96FBGA (TFBGA) form factor, and is lead-free and halogen-free, compliant with RoHS standards. DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by approximately 15-20% while maintaining similar performance. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. The K4B4G1646D-BMK0 is a key component in the memory hierarchy, providing high-speed data storage and retrieval for processors and controllers. Key features include a density of 4Gb, an organization of 256M x 16, and a data rate of 1600 Mbps. The device supports a temperature range of -40°C to 95°C, making it suitable for industrial applications. The 96FBGA package offers a compact footprint with excellent thermal and electrical performance. The device is also lead-free and halogen-free, ensuring environmental compliance. Technically, the K4B4G1646D-BMK0 utilizes Samsung's advanced D-die process technology, which enhances performance and reliability. The device features programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. It supports auto self-refresh and partial array self-refresh for power saving. The 1.35V operation reduces power dissipation, making it ideal for battery-powered and thermally constrained systems. Typical applications include industrial computing, networking equipment, automotive infotainment, and medical devices. The wide temperature range and low power consumption make it suitable for harsh environments. In networking, it provides high-bandwidth memory for routers and switches; in automotive, it supports advanced driver-assistance systems (ADAS) and infotainment; in medical, it enables reliable data processing in diagnostic equipment. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.35V supply and a separate VDDQ, and the reference voltage (VREF) should be carefully routed. For high-speed operation, impedance matching and trace length matching are critical.

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K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BPH90

K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

The Samsung K4B4G1646D-BPH90 is a 4Gb DDR3L SDRAM device organized as 32M x 16 bits across 8 internal banks, designed for high-speed data transfer up to 2133Mb/s per pin. It operates at 1.35V (DDR3L) and is housed in a 96-ball FBGA package, offering a compact footprint for space-constrained designs. This memory component supports advanced DDR3 features such as programmable CAS latency, write latency, on-die termination, and internal calibration for signal integrity. DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. The K4B4G1646D-BPH90 is specifically a 4Gb density device with a 16-bit data bus, making it suitable for applications requiring moderate memory capacity with high-speed data access. Key features include a data rate of 2133Mb/s per pin, 8 internal banks, and support for burst lengths of 8 and 4 (with burst chop). The device includes on-die termination (ODT) for improved signal integrity, ZQ calibration for output driver calibration, and a programmable CAS latency of up to 14. It also features auto precharge, asynchronous reset, and data mask functions. The 96FBGA package measures 13mm x 11.5mm with a 0.8mm ball pitch, enabling high-density PCB layouts. Technically, the K4B4G1646D-BPH90 uses Samsung's D-die process technology, which offers improved performance and power efficiency compared to earlier die revisions. The device supports a wide operating temperature range of 0°C to +85°C, making it suitable for commercial and industrial applications. It is lead-free and halogen-free, complying with RoHS regulations. Typical applications include networking equipment (routers, switches), embedded computing systems, industrial automation, and consumer electronics such as set-top boxes and smart TVs. Its high-speed interface and low power consumption make it ideal for systems requiring reliable memory performance. When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high data rates. The device requires a 1.35V supply and a separate VDDQ supply, which should be carefully regulated.

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K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9

K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung

The Samsung K4B4G1646D-BYH9 is a 4Gb DDR3L SDRAM memory device organized as 256M x 16 bits across 8 internal banks. It operates at a data rate of 1333 Mbps per pin and is designed for low-voltage applications with a supply voltage of 1.35V. The device is housed in a 96-ball FBGA package and is lead-free and halogen-free, compliant with RoHS regulations. DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 memory family, which succeeded DDR2 and is widely used in computing, networking, and embedded systems. Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration for signal integrity. The device supports advanced DDR3 features such as posted CAS, programmable CWL, and asynchronous reset. It is designed for high-speed data transfer and is suitable for applications requiring reliable and efficient memory. The K4B4G1646D-BYH9 uses a 4Gb D-die architecture, which is the fourth generation of Samsung's DDR3 die, offering improved performance and power efficiency. The 96FBGA package provides a compact footprint and excellent thermal characteristics, making it suitable for space-constrained designs. Typical applications include personal computers, laptops, servers, networking equipment, automotive infotainment systems, and medical devices. Its low-voltage operation makes it ideal for battery-powered and energy-efficient systems. When designing with this device, ensure proper signal integrity by following the layout guidelines in the datasheet, including controlled impedance traces and adequate decoupling. The device supports a temperature range of 0°C to 85°C, making it suitable for commercial and industrial environments.

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K4B4G1646D-BYH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYH90

K4B4G1646D-BYH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

The Samsung K4B4G1646D-BYH90 is a 4Gb (512M x 16) DDR3L SDRAM device in a 96-ball FBGA package, designed for high-speed double-data-rate transfer rates up to 2133 Mb/sec/pin (DDR3-2133). It operates from a 1.35V supply (1.283V to 1.45V range) and is also compatible with 1.5V DDR3 operation, offering flexibility in power-sensitive applications. The device features a 16-bit I/O interface, 8 internal banks, and supports burst lengths of 8 and 4 with a burst chop option. DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, and is widely used in computing, networking, and embedded systems where high bandwidth and low power are critical. Key features include programmable CAS latency (CL) and CWL, on-die termination (ODT) using the ODT pin, internal self-calibration via ZQ calibration, and asynchronous reset. The device supports auto precharge, data mask, and dynamic on-chip termination, enhancing signal integrity and simplifying system design. It is lead-free and halogen-free, RoHS compliant, and operates over a temperature range of 0°C to +85°C. The K4B4G1646D uses a D-die process and is available in a 96-ball FBGA package (ball pitch 0.8mm), providing a compact footprint for space-constrained designs. The device includes a programmable output driver impedance and supports DLL (Delay Locked Loop) for precise timing. It also features a temperature-compensated self-refresh (TCSR) mode to reduce power in standby. Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial computing. Its low voltage and high speed make it ideal for battery-powered devices and high-performance computing platforms. The device is also suitable for use in servers and storage systems where reliability and efficiency are paramount. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 2133 Mbps. The ZQ pin requires a 240-ohm resistor to ground for calibration, and the VREFCA and VREFDQ should be properly bypassed.

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K4B4G1646D-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646D-BYK0

K4B4G1646D-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung

The Samsung K4B4G1646D-BYK0 is a 4Gb DDR3L SDRAM organized as 256Mx16, operating at 1.35V (also compatible with 1.5V) in a 96-ball FBGA package. It supports data rates up to 1600 Mbps (PC3-12800) and is designed for a wide range of computing, networking, and embedded applications. DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses an 8n-prefetch architecture and on-die termination to achieve high-speed data transfer. DDR3L is commonly used in laptops, servers, and embedded systems where power efficiency is critical. Key features include a 4Gb density, 16-bit I/O width, 1.35V core supply (with 1.5V compatibility), and a 96-ball FBGA package. The device supports programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. It is lead-free and halogen-free, compliant with RoHS standards. The K4B4G1646D-BYK0 uses Samsung's D-die process technology, offering a balance of performance and power efficiency. The memory operates over a temperature range of 0°C to 85°C (TC), making it suitable for commercial and industrial applications. The 96-ball FBGA package provides a compact footprint for space-constrained designs. Typical applications include DDR3L memory modules for laptops and all-in-one PCs, networking equipment such as routers and switches, and embedded systems like single-board computers (e.g., OLinuXino boards). Its low voltage and high density make it ideal for power-sensitive designs. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device supports both 1.35V and 1.5V operation, but the voltage must be consistent across the memory system.

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K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00

K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung

The Samsung K4B4G1646D-BYK00 is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at 1.35V nominal supply with dual-voltage support for 1.5V operation. It comes in a 96-ball TFBGA package and is designed for high-bandwidth memory applications in computing, networking, and embedded systems. DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by up to 20% compared to standard 1.5V DDR3. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, achieving high data rates up to 1600 Mbps per pin. DDR3L is widely used in mobile devices, laptops, and energy-efficient servers where power efficiency is critical. Key features include a data rate of 1600 Mbps (PC3-12800), programmable CAS latency, and support for both 1.35V and 1.5V supplies, making it versatile for various system designs. The device also includes auto precharge, asynchronous reset, ZQ calibration, data mask, and dynamic on-chip termination (DTC), enhancing signal integrity and simplifying memory controller design. Technically, the K4B4G1646D-BYK00 uses Samsung's D-die process technology, offering improved performance and power characteristics. The 96-ball TFBGA package provides a compact footprint with excellent thermal and electrical performance. The device supports a temperature range of 0°C to 85°C, suitable for commercial and industrial applications. Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial PCs. Its low voltage operation makes it ideal for battery-powered devices and energy-conscious designs. When designing with this memory, ensure proper decoupling and signal integrity practices, including matched trace lengths and termination resistors, to achieve reliable operation at 1600 Mbps. The dual-voltage capability allows flexible power supply design, but careful attention to VDD and VDDQ levels is required.

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K4B4G1646D-BYMA0 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYMA0

K4B4G1646D-BYMA0 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

The Samsung K4B4G1646D-BYMA0 is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at 1.35V with a data rate of 1866 Mbps (PC3-14900). It is housed in a 96-ball FBGA package and is lead-free and halogen-free, compliant with RoHS. This memory device is designed for high-performance computing, networking, and industrial applications where low power and high bandwidth are critical. DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses an 8n-prefetch architecture to achieve high data rates. DDR3L is backward-compatible with DDR3 slots, making it a popular choice for upgrading existing systems while saving energy. Key features include a 256M x 16 organization, 1.35V power supply, 1866 Mbps data rate, and a 96-ball FBGA package. It supports auto precharge, asynchronous reset, ZQ calibration, data mask, and dynamic on-chip termination (ODT). The operating temperature range is 0°C to +85°C, suitable for commercial and industrial environments. The device uses a 4Gb D-die, which is the fourth generation of Samsung's DDR3L die, offering improved performance and power efficiency. The 96-ball FBGA package provides excellent thermal and electrical characteristics, enabling high-speed signal integrity in dense PCB layouts. Typical applications include servers, networking equipment, industrial PCs, and embedded systems that require high memory density and low power. The 1.35V operation makes it ideal for power-sensitive designs, such as battery-powered devices and energy-efficient data centers. When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 1866 Mbps. The ZQ calibration pin must be connected to a 240-ohm resistor to ground for proper on-die termination calibration.

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K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
K4B4G1646E-BCNB

K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung

The Samsung K4B4G1646E-BCNB is a 4Gb DDR3 SDRAM organized as 256Mx16, operating at 1.35V (low voltage) with a data rate of 1866 Mbps. It is ideal for mobile and embedded applications requiring high bandwidth and low power consumption. The device is housed in a 96-ball FBGA package and is RoHS compliant.

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K4B4G1646E-BMK0 - 4Gb DDR3L SDRAM 1600Mbps | Samsung
K4B4G1646E-BMK0

K4B4G1646E-BMK0 - 4Gb DDR3L SDRAM 1600Mbps | Samsung

The Samsung K4B4G1646E-BMK0 is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at a speed grade of 1600 Mbps (DDR3L-1600) with a supply voltage of 1.35V. It is housed in a 96-ball FBGA package, designed for high-density memory applications in computing, networking, and industrial systems. DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by approximately 15% while maintaining similar performance. It is part of the DDR3 memory family, which uses an 8n-prefetch architecture to achieve high data rates, and is widely used in servers, laptops, and embedded systems. Key features include a data rate of 1600 Mbps, a 16-bit I/O width, and support for various functions such as auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination (ODT), and data mask. The device operates over a temperature range of -40°C to +95°C, making it suitable for industrial and automotive applications. The K4B4G1646E uses Samsung's E-die process technology, which offers improved performance and power efficiency compared to earlier die revisions. It supports programmable CAS latency, burst length of 8, and on-die termination for signal integrity. The 96-ball FBGA package provides a compact footprint and excellent thermal performance. Typical applications include main memory in embedded systems, networking equipment, industrial PCs, and automotive infotainment. Its low voltage and wide temperature range make it ideal for power-sensitive and harsh environments. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ calibration pin requires a 240-ohm resistor to ground for proper operation.

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K4B4G1646E-BMMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BMMA

K4B4G1646E-BMMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung

The Samsung K4B4G1646E-BMMA is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at 1.35V with a data rate of 1600 Mbps (PC3L-12800). It is housed in a 96-ball FBGA package and supports a temperature range of -40°C to +95°C, making it suitable for industrial and automotive applications. This memory device features auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination (DTC), and data mask functions, ensuring reliable and efficient operation in high-speed systems. DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. DDR3L is backward compatible with DDR3 slots, allowing flexible system design. Key features of the K4B4G1646E-BMMA include a 16-bit I/O interface, 8 internal banks, and support for burst lengths of 8 and 4 (with burst chop). It offers programmable CAS latency (CL) and additive latency (AL), and includes on-die termination (ODT) for improved signal integrity. The device also supports self-refresh and partial array self-refresh (PASR) for power saving in standby modes. Technically, the K4B4G1646E-BMMA uses Samsung's E-die process technology, which provides enhanced performance and lower power consumption compared to earlier die revisions. The 96-ball FBGA package measures 9mm x 13mm with a 0.8mm ball pitch, enabling high-density board layouts. The device is RoHS compliant and lead-free, meeting environmental standards. Typical applications include high-performance computing, networking equipment (routers, switches), industrial automation, automotive infotainment and ADAS, and medical imaging systems. Its wide temperature range and low voltage make it ideal for harsh environments where reliability is critical. When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.

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K4B4G1646E-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK0

K4B4G1646E-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung

The Samsung K4B4G1646E-BYK0 is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at 1.35V (DDR3L) with a data rate of DDR3-1600 (800 MHz). It comes in a 96-ball FBGA package (13 x 9 mm, 0.8 mm pitch) and is designed for high-performance computing, networking, and industrial applications requiring low power and high bandwidth. DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses an 8n-prefetch architecture to achieve high data rates. DDR3L is widely used in mobile devices, embedded systems, and servers where power efficiency is critical. Key features include a 4Gb density, x16 organization, and support for DDR3-1600 (800 MHz) operation. The device features on-die termination (ODT), ZQ calibration, and a programmable CAS latency. It operates over a temperature range of 0°C to +95°C (TC) and supports auto precharge and self-refresh modes. The 96-ball FBGA package provides a compact footprint suitable for space-constrained designs. The K4B4G1646E-BYK0 uses Samsung's E-die process technology, which offers improved performance and power efficiency compared to earlier die revisions. The device includes dynamic on-chip termination and asynchronous reset for robust signal integrity. It supports a burst length of 8 and a burst chop of 4, enabling flexible data access patterns. Typical applications include DDR3L memory modules for laptops, embedded computing, networking equipment, and industrial PCs. Its low voltage and high density make it ideal for power-sensitive designs. The device is also suitable for use in set-top boxes, routers, and other consumer electronics. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 800 MHz. The device requires a 1.35V supply and a separate VDDQ for the I/O, which should be regulated to the specified tolerances.

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K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung
K4B4G1646E-BYMA

K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

The Samsung K4B4G1646E-BYMA is a 4Gb (256M x 16) DDR3L SDRAM operating at 1.35V, designed for high-performance computing, networking, and industrial applications. It features a data rate of 1866 Mbps/pin (933 MHz clock) and is housed in a 96-ball FBGA package. This E-die DDR3L device supports JEDEC-standard DDR3L functionality, including dynamic on-chip termination (DTC), ZQ calibration, and data mask, ensuring signal integrity and reliable operation in dense memory systems. DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining compatibility with DDR3L and DDR3 systems. It is part of the memory hierarchy in computing systems, serving as main memory for processors, and is widely used in laptops, servers, embedded systems, and networking equipment. Key features include a 4Gb density organized as 256M x 16, a 1.35V power supply (with 1.28V to 1.575V range), a 933 MHz clock frequency, and a typical operating current of 14mA. The device supports auto precharge, asynchronous reset, and dynamic on-chip termination, enhancing performance and ease of use. The FBGA-96 package offers a compact footprint suitable for space-constrained designs. Technically, the K4B4G1646E-BYMA uses Samsung's advanced E-die process technology, providing high-speed operation with low power. It features programmable CAS latency, burst length, and output drive strength, allowing system designers to optimize performance. The device includes a temperature sensor for thermal management and supports on-die termination (ODT) for improved signal quality. Typical applications include DDR3L memory modules for laptops and ultrabooks, networking equipment such as routers and switches, industrial computing systems, and embedded applications requiring high-density, low-power memory. Its 1.35V operation makes it ideal for power-sensitive designs. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a reference voltage (VREF) for optimal operation.

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K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV

K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung

The Samsung K4B4G1646E-BYMATCV is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at 1.35V with a data rate of 1866Mbps (933MHz clock). It comes in a 96-ball FBGA package, offering high density and low power consumption for memory-intensive applications. DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses prefetch buffers and on-die termination to achieve high data rates. DDR3L is widely used in mobile devices, embedded systems, and networking equipment where power efficiency is critical. Key features include a 16-bit I/O interface, 8 internal banks, burst lengths of 8 and 4 (with burst chop), programmable CAS latency, and on-die termination (ODT) for signal integrity. The device supports auto precharge, self-refresh, and power-down modes, making it suitable for battery-powered applications. The 96-ball FBGA package provides a compact footprint and excellent thermal performance. Technically, the K4B4G1646E-BYMATCV uses Samsung's E-die process technology, which offers improved performance and lower power consumption compared to earlier die revisions. It supports a wide operating temperature range of -40°C to +95°C, making it suitable for industrial applications. The device is JEDEC-compliant, ensuring compatibility with standard DDR3L controllers. Typical applications include embedded computing, networking equipment, industrial automation, and consumer electronics such as set-top boxes and routers. Its low voltage and high density make it ideal for designs requiring large memory capacity with minimal power draw. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high speeds. The device requires a 1.35V supply and a separate VDDQ for the I/O, which should be regulated accurately.

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K4B4G1646F-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646F-BYK0

K4B4G1646F-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung

The Samsung K4B4G1646F-BYK0 is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at 1.35V/1.5V with a 96-ball FBGA package. It is designed for high-bandwidth memory applications, offering a data rate of 1866 Mbps (PC3L-14900) and a clock frequency of 933 MHz. The device supports standard DDR3L features including dynamic on-chip termination (DTC), ZQ calibration, and programmable CAS latency. DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the memory hierarchy in computing systems, serving as the main system memory for processors, and is widely used in laptops, servers, and embedded systems. Key features include a 4Gb density, 16-bit I/O width, 96-ball FBGA package, and support for 1.35V and 1.5V operation. The device offers a burst length of 8 and 4, programmable CAS latency, and on-die termination. It also includes auto precharge, self-refresh, and power-down modes for energy efficiency. The K4B4G1646F-BYK0 uses a high-performance CMOS process and features a pseudo-open-drain interface. It supports a wide operating temperature range of 0°C to 95°C (TC) and is RoHS compliant. The device is designed for reliable operation in demanding environments, with a typical refresh period of 7.8 us at 85°C. Typical applications include DDR3L memory modules for laptops, all-in-one PCs, and embedded systems, as well as networking equipment, industrial computers, and automotive infotainment systems. Its low voltage and high density make it ideal for power-sensitive designs. When designing with this device, ensure proper decoupling and signal integrity practices, including matched trace lengths and termination resistors, to achieve reliable high-speed operation.

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K4B4G1646F-BYMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646F-BYMA

K4B4G1646F-BYMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung

The Samsung K4B4G1646F-BYMA is a 4-gigabit DDR3L SDRAM organized as 256M x 16, operating at 1.35V (1.28V~1.45V) and 1.5V (1.425V~1.575V). It comes in a 96-ball FBGA package with lead-free and halogen-free construction. This memory device supports data rates up to 1866 Mbps (PC3-14900) and features auto precharge, asynchronous reset, dynamic on-chip termination (DTC), ZQ calibration, and data mask functions. The operating temperature range is -40°C to +95°C, making it suitable for industrial and automotive applications. DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20%. It is part of the DDR3 family, which uses an 8n-prefetch architecture to achieve high bandwidth. DDR3L is widely used in computing, networking, and embedded systems where power efficiency is critical. Key features include a 16-bit I/O interface, programmable CAS latency, burst lengths of 8 and 4 (with burst chop), on-die termination (ODT) for signal integrity, and a temperature-compensated self-refresh (TCSR) mode. The device supports DLL (Delay-Locked Loop) enabled mode for precise timing and has a 1KB page size. The FBGA-96 package provides a compact footprint suitable for high-density PCB designs. Technically, the K4B4G1646F-BYMA uses a 30nm-class process technology, enabling high density with low power. It incorporates a pseudo-open-drain interface for data strobe (DQS) and supports write leveling, read/write training, and multi-purpose register (MPR) for system calibration. The device is designed to meet JEDEC DDR3L standards, ensuring compatibility with standard memory controllers. Typical applications include laptops, servers, networking equipment, industrial PCs, and automotive infotainment systems. Its low voltage and wide temperature range make it ideal for battery-powered and thermally constrained environments. The 256M x 16 organization is suitable for systems requiring high-density memory with a 16-bit data bus. When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines for DDR3 routing to maintain signal integrity. The ZQ pin requires a 240-ohm resistor to ground for calibration.

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K4B4G1646I-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646I-BYK0

K4B4G1646I-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung

The Samsung K4B4G1646I-BYK0 is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at 1.35V with a data rate of 1866 Mbps (933 MHz clock). It is housed in a 96-ball FBGA package, offering high density and low power consumption for mobile and embedded applications. DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in laptops, servers, and embedded systems where power efficiency is critical. Key features include a 4Gb density, 16-bit I/O width, 1.35V core voltage, and support for data rates up to 1866 Mbps. The device features on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also includes auto-refresh and self-refresh modes for power saving, making it suitable for battery-powered devices. The K4B4G1646I-BYK0 uses a high-performance CMOS process and a bank architecture of 8 banks, enabling high-speed random access. The FBGA-96 package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm. The device supports a temperature range of 0°C to 95°C (case temperature), ensuring reliable operation in various environments. Typical applications include mobile devices, embedded computing, networking equipment, and industrial automation. Its low voltage and high density make it ideal for memory-intensive applications where space and power are constrained. When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a reference voltage (VREF) for the I/O.

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K4B4G1646Q - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646Q

K4B4G1646Q - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

The Samsung K4B4G1646Q is a 4Gb (256Mx16) Q-die DDR3L SDRAM in a 96-ball FBGA package, operating at 1.35V. It is a high-density, low-power memory solution designed for a wide range of computing and embedded applications. DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a reduced I/O voltage of 1.35V, compared to standard DDR3's 1.5V. This lower voltage reduces power consumption by approximately 15-20%, making it ideal for power-sensitive devices such as laptops, servers, and industrial systems. DDR3L is part of the DDR3 memory family, which uses an 8n-prefetch architecture to achieve high data rates, and is a predecessor to DDR4. Key features of the K4B4G1646Q include a 16-bit data bus, a data rate of up to 1866 Mbps (PC3-14900), and a 96-ball FBGA package. It is lead-free and halogen-free, and RoHS compliant. The device supports a burst length of 8 (BL8) and on-die termination (ODT) for improved signal integrity. It also features programmable CAS latency and additive latency, allowing system designers to optimize performance. Technically, the K4B4G1646Q uses Samsung's Q-die process technology, which is a 20nm-class DRAM process. This advanced process node enables higher density and lower power consumption compared to older D-die or E-die variants. The device includes an internal temperature sensor for self-refresh rate control, which helps manage power in thermally constrained environments. Typical applications include main memory for laptops and ultrabooks, embedded systems, networking equipment, and industrial PCs. Its low voltage and high density make it suitable for designs where power efficiency and board space are critical. When designing with this device, ensure proper decoupling capacitors are placed near the power pins, and follow the layout guidelines in the datasheet for the 96-ball FBGA package to maintain signal integrity at high data rates.

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K4F6E3S4HM-THCL02V - 16Gb LPDDR4 SDRAM FBGA-200 | Samsung
K4F6E3S4HM-THCL02V

K4F6E3S4HM-THCL02V - 16Gb LPDDR4 SDRAM FBGA-200 | Samsung

The Samsung K4F6E3S4HM-THCL02V is a 16Gb (gigabit) LPDDR4 mobile SDRAM in a 200-ball Fine-Pitch BGA (FBGA) package, rated for 4266 Mbps operation. It is organized as 512M x 32 and operates from a 1.1V/1.1V/1.8V supply set (VDD1/VDD2/VDDQ), making it a high-bandwidth, low-voltage DRAM intended for flagship smartphones, AR/VR headsets, and AI accelerator edge platforms. An LPDDR4 (Low-Power Double Data Rate 4) SDRAM is a JEDEC-defined volatile memory standard optimized for mobile and embedded applications where bandwidth density and energy per bit matter. LPDDR4 SDRAM sits inside the broader taxonomy of DRAM -> volatile memory -> memory IC -> semiconductor. Compared to LPDDR3, it doubles peak data rates, halves the I/O voltage (1.1V VDDQ), and introduces a 16n-prefetch architecture. LPDDR4X (the closest variant in this family) further lowers I/O voltage to 0.6V for additional power savings. Key features of the K4F6E3S4HM-THCL02V include 4266 Mbps per-pin data rate, x32 organization (16Gb density), industrial-grade -40C to +105C operating temperature, and an ultra-thin FBGA-200 footprint tuned for sub-1.0mm stacked-package-on-package (PoP) and discrete mobile mainboard routing. The device supports both single-channel and dual-channel SoC interfaces, command-based training via MR (mode register) writes, and per-byte write leveling. Technically, this LPDDR4 uses a 16n prefetch architecture with eight internal banks per channel, programmable CAS latency, and on-die temperature sensing. The 4266 Mbps speed grade corresponds to a clock rate of 2133 MHz DDR. The wide operating range makes it suitable for automotive infotainment and industrial HMI where thermal margins exceed commercial-grade DRAM envelopes. Typical applications include flagship Android smartphones, AR/VR headsets, AI edge inference modules, automotive infotainment, and ultra-thin notebooks. Its 4266 Mbps bandwidth supports multi-camera ISP pipelines and on-device neural network inference with low DRAM power. Design tip: route the LPDDR4 channel as a 100-ohm differential matched-length group, place the device within 3 mm of the SoC to control fly-by impedance, and add a 100 nF + 1 uF decoupling set near each VDD1/VDD2/VDDQ ball. Ensure the SoC supports the JEDEC JESD209-4 LPDDR4 base specification for full timing compliance. This page synthesizes distributor pricing, drop-in alternatives, and practical layout guidance not found in the manufacturer datasheet.

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K4F8E304HB-MGCJ - 8Gb LPDDR4 x32 3733Mbps DRAM | Samsung
K4F8E304HB-MGCJ

K4F8E304HB-MGCJ - 8Gb LPDDR4 x32 3733Mbps DRAM | Samsung

The Samsung K4F8E304HB-MGCJ is an 8Gb LPDDR4 mobile DRAM memory IC organized as 256M x32 with a data rate up to 3733 Mbps, operating at a low 1.1V core voltage and housed in a 200-ball FBGA (TFBGA-200) package. LPDDR4 (Low Power Double Data Rate 4) is a JEDEC-standardized synchronous DRAM designed for mobile and embedded systems, offering high bandwidth at substantially lower power than DDR3/DDR4. Within the memory hierarchy, it sits under DRAM -> SDRAM -> volatile memory and serves as the main working memory for application processors in smartphones, tablets, and embedded computing modules. Key features include 8Gb density on a x32 data bus, a 3733 Mbps maximum data rate (1866 MHz clock), and 1.1V VDD core operation with a separate 1.8V rail per distributor data. The low voltage reduces dynamic and standby power, extending battery life in portable devices, while the wide x32 bus simplifies layout versus x16 stacking in bandwidth-limited designs. Technically, the device is fabricated on Samsung's advanced DRAM process and complies with the JEDEC LPDDR4 standard, ensuring interoperability with mainstream mobile and embedded SoCs. It supports power-saving modes including deep power-down and self-refresh to minimize idle current, and operates across -25C to +85C per distributor listings, suiting industrial as well as consumer environments. Typical applications include smartphones and tablets, AI accelerators and edge inference, VR headsets, wearables, industrial controllers, and computing modules where firmware boot, embedded logging, and high-bandwidth working memory are required. Design consideration: follow controlled-impedance, length-matched routing for the 3733 Mbps interface and place decoupling capacitors close to each VDD ball group; adequate power integrity is essential at full data rate. This page synthesizes distributor pricing, drop-in alternative cross-references, and practical design guidance not found in the manufacturer datasheet.

USD $2,55 Kontakt