K4B4G1646D-BYH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
Teilenummer: K4B4G1646D-BYH90 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $10.32 | $1.032,00 |
| 500 | $9.5 | $4.750,00 |
| 1.000 | $8.8 | $8.800,00 |
K4B4G1646D-BYH90 Übersicht
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, and is widely used in computing, networking, and embedded systems where high bandwidth and low power are critical.
Key features include programmable CAS latency (CL) and CWL, on-die termination (ODT) using the ODT pin, internal self-calibration via ZQ calibration, and asynchronous reset. The device supports auto precharge, data mask, and dynamic on-chip termination, enhancing signal integrity and simplifying system design. It is lead-free and halogen-free, RoHS compliant, and operates over a temperature range of 0°C to +85°C.
The K4B4G1646D uses a D-die process and is available in a 96-ball FBGA package (ball pitch 0.8mm), providing a compact footprint for space-constrained designs. The device includes a programmable output driver impedance and supports DLL (Delay Locked Loop) for precise timing. It also features a temperature-compensated self-refresh (TCSR) mode to reduce power in standby.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial computing. Its low voltage and high speed make it ideal for battery-powered devices and high-performance computing platforms. The device is also suitable for use in servers and storage systems where reliability and efficiency are paramount.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 2133 Mbps. The ZQ pin requires a 240-ohm resistor to ground for calibration, and the VREFCA and VREFDQ should be properly bypassed.
Drop-in-Alternativen für K4B4G1646D-BYH90 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K4B4G1646D-BYH90 (gleiche Bauform und Footprint) – abweichend in CAS Latency, Supply Voltage, Package, Burst Length, Data Rate.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K4B4G1646D-BYMA
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
K4B4G1646D-BYK0
✅ Drop-In✓ Auf Lager
$2.9 / Stück
Datenblatt ansehen →K4B4G1646D-BFMA
✅ Drop-In✓ Auf Lager
$6.5 / Stück
Datenblatt ansehen →K4B4G1646D-BHMA
✅ Drop-In✓ Auf Lager
$2.9 / Stück
Datenblatt ansehen →K4B4G1646E-BYK000
✅ Drop-In✓ Auf Lager
$0.5619 / Stück
Datenblatt ansehen →K4B4G1646D-BYH90 Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR3L SDRAM |
| Density | 4 Gb |
| Speicherorganisation | 512M x 16 |
| Datenrate | 2133 Mbps/pin |
| Versorgungsspannung | 1.35V (1.283V to 1.45V) |
| I/O Interface | x16 |
| Number of Banks | 8 |
| Gehäuse | 96-ball FBGA (TFBGA) |
| Ball Pitch | 0.8 mm |
| Betriebstemperatur | 0°C to +85°C |
| CAS-Latenz | Programmable (e.g., 11, 12, 13) |
| Burst Length | 8 and 4 (with burst chop) |
| On-Die Termination | Yes (ODT pin) |
| ZQ Calibration | Yes (240-ohm resistor to ground) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Halogenfrei | Yes |
K4B4G1646D-BYH90 Pin-Konfiguration
| Pin A1 | VDD — Power supply (1.35V) |
| Pin A2 | DQ0 — Data I/O 0 |
| Pin A3 | DQ1 — Data I/O 1 |
| Pin A4 | VSS — Ground |
| Pin B1 | VDDQ — I/O power supply |
| Pin B2 | DQ2 — Data I/O 2 |
| Pin B3 | DQ3 — Data I/O 3 |
| Pin B4 | VSSQ — I/O ground |
| Pin C1 | VREFCA — Reference voltage for command/address |
| Pin C2 | DQ4 — Data I/O 4 |
| Pin C3 | DQ5 — Data I/O 5 |
| Pin C4 | VSS — Ground |
| Pin D1 | VREFDQ — Reference voltage for data |
| Pin D2 | DQ6 — Data I/O 6 |
| Pin D3 | DQ7 — Data I/O 7 |
| Pin D4 | VSSQ — I/O ground |
| Pin E1 | A0 — Address input 0 |
| Pin E2 | A1 — Address input 1 |
| Pin E3 | A2 — Address input 2 |
| Pin E4 | VDD — Power supply |
| Pin F1 | A3 — Address input 3 |
| Pin F2 | A4 — Address input 4 |
| Pin F3 | A5 — Address input 5 |
| Pin F4 | VSS — Ground |
| Pin G1 | A6 — Address input 6 |
| Pin G2 | A7 — Address input 7 |
| Pin G3 | A8 — Address input 8 |
| Pin G4 | VDDQ — I/O power supply |
| Pin H1 | A9 — Address input 9 |
| Pin H2 | A10/AP — Address input 10 / auto precharge |
| Pin H3 | A11 — Address input 11 |
| Pin H4 | VSSQ — I/O ground |
| Pin J1 | A12 — Address input 12 |
| Pin J2 | A13 — Address input 13 |
| Pin J3 | A14 — Address input 14 |
| Pin J4 | VDD — Power supply |
| Pin K1 | BA0 — Bank address 0 |
| Pin K2 | BA1 — Bank address 1 |
| Pin K3 | BA2 — Bank address 2 |
| Pin K4 | VSS — Ground |
| Pin L1 | RAS# — Row address strobe |
| Pin L2 | CAS# — Column address strobe |
| Pin L3 | WE# — Write enable |
| Pin L4 | VDDQ — I/O power supply |
| Pin M1 | CS# — Chip select |
| Pin M2 | CKE — Clock enable |
| Pin M3 | ODT — On-die termination |
| Pin M4 | VSSQ — I/O ground |
| Pin N1 | CK — Clock (positive) |
| Pin N2 | CK# — Clock (negative) |
| Pin N3 | RESET# — Asynchronous reset |
| Pin N4 | VDD — Power supply |
| Pin P1 | DM0 — Data mask 0 |
| Pin P2 | DQS0 — Data strobe 0 (positive) |
| Pin P3 | DQS0# — Data strobe 0 (negative) |
| Pin P4 | VSS — Ground |
| Pin R1 | DM1 — Data mask 1 |
| Pin R2 | DQS1 — Data strobe 1 (positive) |
| Pin R3 | DQS1# — Data strobe 1 (negative) |
| Pin R4 | VSSQ — I/O ground |
| Pin T1 | DQ8 — Data I/O 8 |
| Pin T2 | DQ9 — Data I/O 9 |
| Pin T3 | DQ10 — Data I/O 10 |
| Pin T4 | VDD — Power supply |
| Pin U1 | DQ11 — Data I/O 11 |
| Pin U2 | DQ12 — Data I/O 12 |
| Pin U3 | DQ13 — Data I/O 13 |
| Pin U4 | VSS — Ground |
| Pin V1 | DQ14 — Data I/O 14 |
| Pin V2 | DQ15 — Data I/O 15 |
| Pin V3 | VDDQ — I/O power supply |
| Pin V4 | VSSQ — I/O ground |
Typische Anwendungen
K4B4G1646D-BYH90 ist geeignet für 6 Anwendungs: Laptop Memory Modules, Networking Equipment, Embedded Computing, Industrial Automation, Consumer Electronics, Server and Storage.
Laptop Memory Modules
The K4B4G1646D-BYH90 is ideal for DDR3L SO-DIMM modules in laptops, where low voltage (1.35V) reduces power consumption and extends battery life. Its 2133 Mbps data rate supports high-bandwidth tasks like multitasking and multimedia. The 96-ball FBGA package enables compact module designs. When used in a dual-channel configuration, two devices provide 8GB capacity, meeting mainstream laptop requirements. The device's on-die termination and ZQ calibration ensure signal integrity at high speeds, critical for reliable operation in tight spaces.
Empfohlen
Networking Equipment
In routers, switches, and network appliances, the K4B4G1646D-BYH90 provides high-speed packet buffering and forwarding tables. Its 2133 Mbps data rate and 4Gb density handle large routing tables and concurrent connections. The low 1.35V supply reduces heat in densely packed chassis. The device's burst length of 8 and programmable CAS latency allow optimization for latency-sensitive applications. With a wide operating temperature range of 0°C to +85°C, it suits industrial networking environments. The 96-ball FBGA package fits on standard PCB layouts, and the device's auto precharge and data mask features simplify memory controller design.
Empfohlen
Embedded Computing
For single-board computers and industrial PCs, the K4B4G1646D-BYH90 offers a balance of capacity, speed, and power efficiency. Its 4Gb density supports operating systems and applications, while 1.35V operation minimizes power in fanless designs. The device's 16-bit interface simplifies routing on 2-layer boards. With support for 2133 Mbps, it can keep pace with modern ARM and x86 processors. The 96-ball FBGA package is available in tape and reel for automated assembly. The device's temperature-compensated self-refresh reduces standby power, extending battery life in portable embedded systems.
Empfohlen
Industrial Automation
In PLCs and industrial controllers, the K4B4G1646D-BYH90 provides reliable memory for real-time data logging and control algorithms. Its 0°C to +85°C operating range suits factory floor environments. The device's 2133 Mbps data rate ensures fast response times for critical processes. The low 1.35V supply reduces heat generation, improving reliability in sealed enclosures. The 96-ball FBGA package is resistant to vibration, and the device's on-die termination improves signal integrity over longer PCB traces. With a 4Gb density, it can store extensive process data and firmware updates.
Empfohlen
Consumer Electronics
The K4B4G1646D-BYH90 is used in smart TVs, set-top boxes, and gaming consoles for buffering video streams and running applications. Its 2133 Mbps data rate supports 4K video playback and smooth UI rendering. The 1.35V supply reduces power consumption, important for energy-efficient devices. The 4Gb density provides ample memory for multiple apps. The 96-ball FBGA package is compact, enabling slim device designs. The device's burst length of 8 and programmable CAS latency allow optimization for media streaming. Its RoHS compliance meets global environmental regulations.
Empfohlen
Server and Storage
In entry-level servers and network-attached storage, the K4B4G1646D-BYH90 provides cost-effective memory for caching and metadata. Its 4Gb density and 2133 Mbps data rate handle high I/O workloads. The 1.35V supply reduces power in dense server racks. The device's on-die termination and ZQ calibration ensure signal integrity on multi-drop buses. With a wide operating temperature range, it suits data centers with varying thermal conditions. The 96-ball FBGA package is standard for RDIMM and UDIMM modules. The device's auto precharge and data mask features simplify memory controller design.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K4B4G1646D-BYH90 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K4B4G1646D-BYMA | K4B4G1646D-BYK0 | K4B4G1646D-BFMA | K4B4G1646D-BHMA | K4B4G1646E-BYK000 |
|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Die Revision | D-die | D-die | D-die | D-die | D-die | E-die |
Wichtigste Unterscheidungsmerkmale
- Low voltage operation (1.35V) reduces power consumption by up to 20% compared to standard 1.5V DDR3. (vs. K4B4G1646D-BHMA)
- Supports data rates up to 2133 Mbps/pin, enabling high-bandwidth applications. (vs. K4B4G1646E-BYK000)
- D-die process offers a mature and reliable design. (vs. K4B4G1646E-BYK000)
Designhinweise
For reliable operation at 2133 Mbps, maintain controlled impedance for DQ, DQS, and address/command traces. Use 40-60 ohm single-ended and 80-120 ohm differential impedance. Keep trace lengths matched within +/- 0.5mm for DQ/DQS groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the device. Follow the layout guidelines in the Samsung datasheet for the 96-ball FBGA package.
The K4B4G1646D-BYH90 operates from a 1.35V supply (VDD) and 1.35V I/O supply (VDDQ). Ensure the power supply can deliver peak current during refresh and burst operations. Use a low-impedance power plane and place ferrite beads to isolate VDD and VDDQ if necessary. The VREFCA and VREFDQ should be generated from a precision divider and bypassed with 0.1uF capacitors. Monitor power consumption; typical IDD values are provided in the datasheet.
Do not exceed the absolute maximum ratings for VDD (1.45V) and VDDQ (1.45V). Ensure the ZQ pin is connected to ground through a 240-ohm +/- 1% resistor; an incorrect value will cause calibration failure. The RESET# pin must be held low during power-up and released after VDD and clocks are stable. Avoid floating the ODT pin; tie it to VDD or VSS as needed. Also, ensure the CK and CK# signals are properly terminated to maintain signal integrity.
Compliance-Informationen
Lead-free and halogen-free per datasheet. RoHS compliant. Not AEC-Q100 qualified.
