K4B4G1646F-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
Teilenummer: K4B4G1646F-BYK0 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.52 | $2,52 |
| 10 | $2.35 | $23,50 |
| 100 | $2.1 | $210,00 |
| 500 | $1.95 | $975,00 |
| 1.000 | $1.8 | $1.800,00 |
K4B4G1646F-BYK0 Übersicht
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the memory hierarchy in computing systems, serving as the main system memory for processors, and is widely used in laptops, servers, and embedded systems.
Key features include a 4Gb density, 16-bit I/O width, 96-ball FBGA package, and support for 1.35V and 1.5V operation. The device offers a burst length of 8 and 4, programmable CAS latency, and on-die termination. It also includes auto precharge, self-refresh, and power-down modes for energy efficiency.
The K4B4G1646F-BYK0 uses a high-performance CMOS process and features a pseudo-open-drain interface. It supports a wide operating temperature range of 0°C to 95°C (TC) and is RoHS compliant. The device is designed for reliable operation in demanding environments, with a typical refresh period of 7.8 us at 85°C.
Typical applications include DDR3L memory modules for laptops, all-in-one PCs, and embedded systems, as well as networking equipment, industrial computers, and automotive infotainment systems. Its low voltage and high density make it ideal for power-sensitive designs.
When designing with this device, ensure proper decoupling and signal integrity practices, including matched trace lengths and termination resistors, to achieve reliable high-speed operation.
Drop-in-Alternativen für K4B4G1646F-BYK0 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K4B4G1646F-BYK0 (gleiche Bauform und Footprint) – abweichend in Data Rate, Operating Temperature, Package, Burst Length, Supply Voltage.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K4B4G1646E-BYK0
✅ Drop-In✓ Auf Lager
$1.8 / Stück
Datenblatt ansehen →K4B4G1646D-BYK0
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$2.9 / Stück
Datenblatt ansehen →K4B4G1646E-BCMA
✅ Drop-In✓ Auf Lager
$3.7734 / Stück
Datenblatt ansehen →MT41K256M16HA-125:A1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
H5TC4G63AFR-PBA
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$3.9773 / Stück
Datenblatt ansehen →K4B4G1646F-BYK0 Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR3L SDRAM |
| Speichergröße | 4 Gb |
| Memory Organization | 256M x 16 |
| Versorgungsspannung | 1.35V / 1.5V |
| Datenrate | 1866 Mbps |
| Clock Frequency | 933 MHz |
| Gehäuse | 96-ball FBGA |
| Betriebstemperatur | 0°C to 95°C (TC) |
| Schnittstelle | Parallel |
| Burst Length | 8 and 4 |
| CAS-Latenz | Programmable |
| On-Die Termination | Yes |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Self-Refresh | Yes |
| RoHS | Compliant |
K4B4G1646F-BYK0 Pin-Konfiguration
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDD — Power supply |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
Typische Anwendungen
K4B4G1646F-BYK0 ist geeignet für 6 Anwendungs: Laptop Memory, Embedded Systems, Networking Equipment, Automotive Infotainment, Industrial PCs, Servers.
Laptop Memory
The K4B4G1646F-BYK0 is ideal for laptop memory modules (SO-DIMM) due to its low 1.35V operation, reducing power consumption and extending battery life. Its 4Gb density allows 8GB modules with 16 chips, and the 1866 Mbps data rate supports modern processors. The FBGA package enables compact module designs, and the wide temperature range ensures reliability in portable devices.
Empfohlen
Embedded Systems
In embedded systems, the K4B4G1646F-BYK0 provides high-density memory for applications like industrial controllers and networking equipment. Its 1.35V operation reduces heat generation, and the 96-ball FBGA package is suitable for space-constrained PCBs. The device supports standard DDR3L features like ZQ calibration and on-die termination, simplifying design. Its 0-95°C range covers most industrial environments.
Empfohlen
Networking Equipment
The K4B4G1646F-BYK0 is used in routers, switches, and firewalls for packet buffering and routing tables. Its high bandwidth (1866 Mbps) and low latency support high-throughput data processing. The 1.35V supply reduces power in always-on equipment, and the FBGA package offers good thermal performance. The device's reliability and long lifecycle make it suitable for infrastructure deployments.
Empfohlen
Automotive Infotainment
In automotive infotainment systems, the K4B4G1646F-BYK0 provides memory for navigation, media playback, and connectivity. Its 1.35V operation reduces power draw from the vehicle's electrical system, and the 0-95°C range covers cabin temperature extremes. The FBGA package withstands vibration, and the high data rate supports smooth graphics. Samsung's automotive-grade variants are available for stricter requirements.
Empfohlen
Industrial PCs
The K4B4G1646F-BYK0 is used in industrial PCs for factory automation and process control. Its 4Gb density allows large memory footprints for data logging and HMI applications. The 1.35V supply reduces heat in sealed enclosures, and the wide temperature range ensures operation in harsh environments. The device's long availability supports extended product lifecycles common in industrial equipment.
Empfohlen
Servers
In entry-level servers, the K4B4G1646F-BYK0 is used in UDIMM modules for cost-effective memory expansion. Its 1866 Mbps data rate supports dual-channel configurations, and the 1.35V operation reduces data center power consumption. The FBGA package allows high-density modules, and the device's reliability is critical for 24/7 operation. ECC variants are available for error correction.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K4B4G1646F-BYK0 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K4B4G1646E-BYK0 | K4B4G1646D-BYK0 | MT41K256M16HA-125:A1 | H5TC4G63AFR-PBA |
|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V / 1.5V |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Operating Temperature | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
Wichtigste Unterscheidungsmerkmale
- Low voltage operation (1.35V) (vs. Standard DDR3 parts at 1.5V)
- High density 4Gb in 16-bit organization (vs. 2Gb parts like K4B2G1646F-BYK0)
- Samsung F-die revision (vs. E-die (K4B4G1646E-BYK0))
Designhinweise
For high-speed DDR3L routing, maintain 50-ohm single-ended impedance and 100-ohm differential impedance for DQS signals. Keep trace lengths matched within 50 mils for address/command and 25 mils for data groups. Use ground planes beneath the FBGA to minimize noise.
Decouple VDD and VDDQ with 0.1uF and 1uF capacitors placed close to the balls. Use a dedicated power plane for VDDQ to reduce noise. The 1.35V supply should be stable within +/-5% to ensure reliable operation.
The FBGA package dissipates heat through the solder balls and PCB. Ensure adequate thermal vias under the package to conduct heat to inner layers. For high ambient temperatures, consider airflow or heatsinks to keep TC below 95°C.
Compliance-Informationen
RoHS compliance confirmed from datasheet. Other compliance data not available.
