K4B4G1646F-BYMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
Teilenummer: K4B4G1646F-BYMA ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $10.62 | $10,62 |
| 10 | $9.5 | $95,00 |
| 100 | $8.2 | $820,00 |
| 500 | $7.1 | $3.550,00 |
| 1.000 | $6.3 | $6.300,00 |
K4B4G1646F-BYMA Übersicht
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20%. It is part of the DDR3 family, which uses an 8n-prefetch architecture to achieve high bandwidth. DDR3L is widely used in computing, networking, and embedded systems where power efficiency is critical.
Key features include a 16-bit I/O interface, programmable CAS latency, burst lengths of 8 and 4 (with burst chop), on-die termination (ODT) for signal integrity, and a temperature-compensated self-refresh (TCSR) mode. The device supports DLL (Delay-Locked Loop) enabled mode for precise timing and has a 1KB page size. The FBGA-96 package provides a compact footprint suitable for high-density PCB designs.
Technically, the K4B4G1646F-BYMA uses a 30nm-class process technology, enabling high density with low power. It incorporates a pseudo-open-drain interface for data strobe (DQS) and supports write leveling, read/write training, and multi-purpose register (MPR) for system calibration. The device is designed to meet JEDEC DDR3L standards, ensuring compatibility with standard memory controllers.
Typical applications include laptops, servers, networking equipment, industrial PCs, and automotive infotainment systems. Its low voltage and wide temperature range make it ideal for battery-powered and thermally constrained environments. The 256M x 16 organization is suitable for systems requiring high-density memory with a 16-bit data bus.
When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines for DDR3 routing to maintain signal integrity. The ZQ pin requires a 240-ohm resistor to ground for calibration.
Drop-in-Alternativen für K4B4G1646F-BYMA – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K4B4G1646F-BYMA (gleiche Bauform und Footprint) – abweichend in Package, Memory Type, CAS Latency, Clock Frequency, Data Rate.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K4B4G1646E-BYMA
✅ Drop-In✓ Auf Lager
$14.3182 / Stück
Datenblatt ansehen →K4B4G1646D-BYMA
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
K4B4G1646B-BYMA
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MT41K512M16HA-125
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
H5TQ4G63CFR-PBC
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT41K256M16HA-125
✅ Drop-In✓ Auf Lager
$6.3636 / Stück
Datenblatt ansehen →H5TQ4G63AFR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
K4B4G1646F-BYMA Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR3L SDRAM |
| Density | 4 Gb |
| Speicherorganisation | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (1.28V~1.45V) & 1.5V (1.425V~1.575V) |
| Datenrate | 1866 Mbps (PC3-14900) |
| Gehäuse | 96-FBGA (Lead-Free & Halogen-Free) |
| Betriebstemperatur | -40°C to +95°C |
| CAS-Latenz | CL=13 (at 1.35V) |
| Burst Length | 8, 4 (with burst chop) |
| Schnittstelle | 16-bit I/O |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| Data Mask | Yes |
| RoHS | Compliant |
| Halogenfrei | Yes |
K4B4G1646F-BYMA Pin-Konfiguration
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | VSS — Ground |
| Pin B1 | DQ1 — Data input/output 1 |
| Pin B2 | VDDQ — Power supply for output |
| Pin B3 | DQ2 — Data input/output 2 |
| Pin C1 | DQ3 — Data input/output 3 |
| Pin C2 | VSSQ — Ground for output |
| Pin C3 | DQ4 — Data input/output 4 |
| Pin D1 | DQ5 — Data input/output 5 |
| Pin D2 | VDD — Power supply |
| Pin D3 | DQ6 — Data input/output 6 |
| Pin E1 | DQ7 — Data input/output 7 |
| Pin E2 | VSS — Ground |
| Pin E3 | DQS0 — Data strobe 0 |
| Pin F1 | DQS0# — Data strobe 0 complement |
| Pin F2 | VDDQ — Power supply for output |
| Pin F3 | DM0 — Data mask 0 |
| Pin G1 | A0 — Address input 0 |
| Pin G2 | A1 — Address input 1 |
| Pin G3 | A2 — Address input 2 |
| Pin H1 | A3 — Address input 3 |
| Pin H2 | A4 — Address input 4 |
| Pin H3 | A5 — Address input 5 |
| Pin J1 | A6 — Address input 6 |
| Pin J2 | A7 — Address input 7 |
| Pin J3 | A8 — Address input 8 |
| Pin K1 | A9 — Address input 9 |
| Pin K2 | A10/AP — Address input 10 / auto precharge |
| Pin K3 | A11 — Address input 11 |
| Pin L1 | A12 — Address input 12 |
| Pin L2 | A13 — Address input 13 |
| Pin L3 | A14 — Address input 14 |
| Pin M1 | BA0 — Bank address 0 |
| Pin M2 | BA1 — Bank address 1 |
| Pin M3 | BA2 — Bank address 2 |
| Pin N1 | CK — Clock |
| Pin N2 | CK# — Clock complement |
| Pin N3 | CKE — Clock enable |
| Pin P1 | CS# — Chip select |
| Pin P2 | RAS# — Row address strobe |
| Pin P3 | CAS# — Column address strobe |
| Pin R1 | WE# — Write enable |
| Pin R2 | ODT — On-die termination |
| Pin R3 | RESET# — Reset |
| Pin T1 | ZQ — Calibration reference |
| Pin T2 | VDD — Power supply |
| Pin T3 | VSS — Ground |
Typische Anwendungen
K4B4G1646F-BYMA ist geeignet für 6 Anwendungs: Laptop Memory, Networking Equipment, Industrial PCs, Automotive Infotainment, Embedded Systems, Servers and Data Centers.
Laptop Memory
The K4B4G1646F-BYMA is ideal for laptop memory modules (SO-DIMM) due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gb density and 256Mx16 organization allow for compact module designs. The wide temperature range (-40°C to +95°C) ensures reliable operation in portable devices exposed to varying environmental conditions. With data rates up to 1866 Mbps, it meets the performance demands of modern computing tasks, including multitasking and multimedia applications.
Empfohlen
Networking Equipment
In networking equipment such as routers and switches, the K4B4G1646F-BYMA provides high-bandwidth memory for packet buffering and forwarding tables. Its 1866 Mbps data rate supports high-throughput data processing, while the low 1.35V supply reduces heat generation in densely packed chassis. The FBGA-96 package allows for high-density PCB layouts, and the auto precharge and ZQ calibration features simplify system design. The industrial temperature range makes it suitable for outdoor and harsh environment networking gear.
Empfohlen
Industrial PCs
The K4B4G1646F-BYMA is well-suited for industrial PCs that require reliable operation in extreme temperatures. Its -40°C to +95°C operating range ensures functionality in factory floors and outdoor installations. The 1.35V operation reduces power consumption, which is critical for fanless designs. With 4Gb density, it provides ample memory for control algorithms and data logging. The device's compliance with JEDEC DDR3L standards ensures compatibility with standard industrial motherboards.
Empfohlen
Automotive Infotainment
For automotive infotainment systems, the K4B4G1646F-BYMA offers the performance and reliability needed for navigation, media playback, and connectivity. Its wide temperature range (-40°C to +95°C) meets AEC-Q100 Grade 3 requirements, ensuring operation in vehicle cabins. The low 1.35V supply reduces power draw from the vehicle's electrical system. The 1866 Mbps data rate supports smooth graphics and fast app loading. The FBGA-96 package is compact, fitting into space-constrained head units.
Empfohlen
Embedded Systems
The K4B4G1646F-BYMA is a versatile memory solution for embedded systems, including single-board computers and IoT gateways. Its low power consumption and wide temperature range make it suitable for battery-powered and outdoor deployments. The 256Mx16 organization provides a good balance of density and bus width for many applications. The device's support for DLL-enabled mode and on-die termination simplifies PCB design, reducing external components. With 1866 Mbps, it can handle data-intensive tasks like image processing and real-time analytics.
Empfohlen
Servers and Data Centers
In servers and data centers, the K4B4G1646F-BYMA can be used in memory modules for high-density computing. Its 4Gb density allows for large-capacity DIMMs, and the 1.35V operation reduces power consumption, lowering cooling costs. The 1866 Mbps data rate supports high-bandwidth applications such as virtualization and big data analytics. The device's reliability and long lifecycle make it suitable for enterprise environments where uptime is critical.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K4B4G1646F-BYMA – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K4B4G1646E-BYMA | MT41K512M16HA-125 | H5TQ4G63CFR-PBC |
|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung | Samsung | Micron | SK Hynix |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V | 1.35V / 1.5V |
| Data Rate | 1866 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Operating Temperature | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Lead-Free | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- Higher data rate (1866 Mbps) compared to K4B4G1646E-BYMA (vs. K4B4G1646E-BYMA)
- Wider operating temperature range (-40°C to +95°C) vs Micron MT41K512M16HA-125 (vs. MT41K512M16HA-125)
- Dual voltage support (1.35V and 1.5V) vs SK Hynix H5TQ4G63CFR-PBC (vs. H5TQ4G63CFR-PBC)
Designhinweise
For DDR3L routing, maintain 50-ohm single-ended and 100-ohm differential impedance for DQ, DQS, and address/control lines. Keep trace lengths matched within +/- 20 mils for data groups and within +/- 100 mils for address/control. Use a solid ground plane beneath the memory device and minimize vias to reduce signal integrity issues.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close as possible to the pins. Use a 10uF bulk capacitor per power rail. The ZQ pin requires a 240-ohm +/- 1% resistor to ground for calibration. Ensure the VREF voltage is generated accurately, typically at 0.5 * VDDQ.
The K4B4G1646F-BYMA operates up to +95°C, but for high-density modules, consider airflow and heat spreading. The FBGA package has a thermal resistance (theta_JA) of approximately 30°C/W. For industrial applications, ensure adequate cooling to keep the junction temperature within limits. Use thermal vias under the package if possible.
Compliance-Informationen
Lead-free and halogen-free per datasheet. RoHS compliant per Samsung product page. AEC-Q100 not applicable as this is a memory IC, not an automotive-grade part.
