1ED020I12B2XUMA1 vs 1EDI60H12AHXUMA1 Vergleich

Detaillierter Direktvergleich von 1ED020I12B2XUMA1 von Infineon und 1EDI60H12AHXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1ED020I12B2XUMA1 1EDI60H12AHXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,65 $2,18
Driver Type Single-channel IGBT gate driver, galvanically isolated —
Isolation Technology Coreless transformer (magnetic coupling) Galvanic isolation via coreless transformer
Isolation Voltage (Vrms) 4500 Vrms —
Number of Channels 1 1
Output Current (typ.) 2 A source / 2 A sink —
Propagation Delay (typ.) 35 ns —
Supported Switch Voltage Class Up to 1200 V IGBT / SiC MOSFET —
DESAT Protection Yes (programmable threshold) —
Miller Clamp Yes (integrated 2 A clamp FET) —
Input Supply (VCC1) 5 V (logic side) —
Output Supply (VCC2) Unipolar 15 V or bipolar -8.5 V / 15 V —
Gehäuse PG-DSO-16-15 (300 mil wide-body DSO-16) PG-DSO-8-59 (DSO-8 with 8 mm creepage)
Creepage Distance 8 mm 8 mm
Betriebstemperatur -40 °C to +125 °C -40C to +125C [DATA_NEEDED: confirm exact range from datasheet]
Montageart Surface Mount Surface Mount
MSL-Level MSL-3 (per JEDEC J-STD-020) 2 (1 year floor life)
Compliance RoHS compliant —
Product Type — Single-channel high-side gate driver IC
Isolation Voltage Rating — 1200 V
Peak Source Current (typ.) — 10.0 A
Peak Sink Current (typ.) — 9.4 A
Ausgangskonfiguration — Separate source and sink (SEP) outputs
Input Compatibility — CMOS / TTL logic
Driven Device — IGBT (and MOSFET / SiC compatible)
Short-Circuit Protection — Short-circuit clamping
RoHS-Status — Compliant

Datenblätter & Ressourcen

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