1ED020I12B2XUMA1 vs 1EDI60H12AHXUMA1 Comparaison
Comparaison détaillée côte à côte de 1ED020I12B2XUMA1 par Infineon et 1EDI60H12AHXUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
1ED020I12B2XUMA1 - 1200V Isolated Gate Driver, 2A, DESAT | Infineon
1ED020I12B2XUMA1 ✓ ActifInfineon
1EDI60H12AHXUMA1 - 1200V Isolated Gate Driver, 10A Source | Infineon
1EDI60H12AHXUMA1 ✓ ActifComparaison des spécifications
| Paramètre | 1ED020I12B2XUMA1 | 1EDI60H12AHXUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,65 | $2,18 |
| Driver Type | Single-channel IGBT gate driver, galvanically isolated | — |
| Isolation Technology | Coreless transformer (magnetic coupling) | Galvanic isolation via coreless transformer |
| Isolation Voltage (Vrms) | 4500 Vrms | — |
| Number of Channels | 1 | 1 |
| Output Current (typ.) | 2 A source / 2 A sink | — |
| Propagation Delay (typ.) | 35 ns | — |
| Supported Switch Voltage Class | Up to 1200 V IGBT / SiC MOSFET | — |
| DESAT Protection | Yes (programmable threshold) | — |
| Miller Clamp | Yes (integrated 2 A clamp FET) | — |
| Input Supply (VCC1) | 5 V (logic side) | — |
| Output Supply (VCC2) | Unipolar 15 V or bipolar -8.5 V / 15 V | — |
| Boîtier | PG-DSO-16-15 (300 mil wide-body DSO-16) | PG-DSO-8-59 (DSO-8 with 8 mm creepage) |
| Creepage Distance | 8 mm | 8 mm |
| Température de fonctionnement | -40 °C to +125 °C | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | MSL-3 (per JEDEC J-STD-020) | 2 (1 year floor life) |
| Compliance | RoHS compliant | — |
| Product Type | — | Single-channel high-side gate driver IC |
| Isolation Voltage Rating | — | 1200 V |
| Peak Source Current (typ.) | — | 10.0 A |
| Peak Sink Current (typ.) | — | 9.4 A |
| Configuration de sortie | — | Separate source and sink (SEP) outputs |
| Input Compatibility | — | CMOS / TTL logic |
| Driven Device | — | IGBT (and MOSFET / SiC compatible) |
| Short-Circuit Protection | — | Short-circuit clamping |
| Statut RoHS | — | Compliant |