1ED020I12B2XUMA1 vs 1EDI60H12AHXUMA1 Comparison

Detailed side-by-side comparison of 1ED020I12B2XUMA1 by Infineon and 1EDI60H12AHXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1ED020I12B2XUMA1 1EDI60H12AHXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.65 $2.18
Driver Type Single-channel IGBT gate driver, galvanically isolated β€”
Isolation Technology Coreless transformer (magnetic coupling) Galvanic isolation via coreless transformer
Isolation Voltage (Vrms) 4500 Vrms β€”
Number of Channels 1 1
Output Current (typ.) 2 A source / 2 A sink β€”
Propagation Delay (typ.) 35 ns β€”
Supported Switch Voltage Class Up to 1200 V IGBT / SiC MOSFET β€”
DESAT Protection Yes (programmable threshold) β€”
Miller Clamp Yes (integrated 2 A clamp FET) β€”
Input Supply (VCC1) 5 V (logic side) β€”
Output Supply (VCC2) Unipolar 15 V or bipolar -8.5 V / 15 V β€”
Package PG-DSO-16-15 (300 mil wide-body DSO-16) PG-DSO-8-59 (DSO-8 with 8 mm creepage)
Creepage Distance 8 mm 8 mm
Operating Temperature -40 Β°C to +125 Β°C -40C to +125C [DATA_NEEDED: confirm exact range from datasheet]
Mounting Type Surface Mount Surface Mount
MSL Level MSL-3 (per JEDEC J-STD-020) 2 (1 year floor life)
Compliance RoHS compliant β€”
Product Type β€” Single-channel high-side gate driver IC
Isolation Voltage Rating β€” 1200 V
Peak Source Current (typ.) β€” 10.0 A
Peak Sink Current (typ.) β€” 9.4 A
Output Configuration β€” Separate source and sink (SEP) outputs
Input Compatibility β€” CMOS / TTL logic
Driven Device β€” IGBT (and MOSFET / SiC compatible)
Short-Circuit Protection β€” Short-circuit clamping
RoHS Status β€” Compliant

Datasheets & Resources

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