1ED020I12B2XUMA1 vs 1EDI60H12AHXUMA1 Comparación
Comparación detallada lado a lado de 1ED020I12B2XUMA1 por Infineon y 1EDI60H12AHXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
1ED020I12B2XUMA1 - 1200V Isolated Gate Driver, 2A, DESAT | Infineon
1ED020I12B2XUMA1 ✓ ActivoInfineon
1EDI60H12AHXUMA1 - 1200V Isolated Gate Driver, 10A Source | Infineon
1EDI60H12AHXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | 1ED020I12B2XUMA1 | 1EDI60H12AHXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,65 | $2,18 |
| Driver Type | Single-channel IGBT gate driver, galvanically isolated | — |
| Isolation Technology | Coreless transformer (magnetic coupling) | Galvanic isolation via coreless transformer |
| Isolation Voltage (Vrms) | 4500 Vrms | — |
| Number of Channels | 1 | 1 |
| Output Current (typ.) | 2 A source / 2 A sink | — |
| Propagation Delay (typ.) | 35 ns | — |
| Supported Switch Voltage Class | Up to 1200 V IGBT / SiC MOSFET | — |
| DESAT Protection | Yes (programmable threshold) | — |
| Miller Clamp | Yes (integrated 2 A clamp FET) | — |
| Input Supply (VCC1) | 5 V (logic side) | — |
| Output Supply (VCC2) | Unipolar 15 V or bipolar -8.5 V / 15 V | — |
| Encapsulado | PG-DSO-16-15 (300 mil wide-body DSO-16) | PG-DSO-8-59 (DSO-8 with 8 mm creepage) |
| Creepage Distance | 8 mm | 8 mm |
| Temperatura de funcionamiento | -40 °C to +125 °C | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL-3 (per JEDEC J-STD-020) | 2 (1 year floor life) |
| Compliance | RoHS compliant | — |
| Product Type | — | Single-channel high-side gate driver IC |
| Isolation Voltage Rating | — | 1200 V |
| Peak Source Current (typ.) | — | 10.0 A |
| Peak Sink Current (typ.) | — | 9.4 A |
| Configuración de salida | — | Separate source and sink (SEP) outputs |
| Input Compatibility | — | CMOS / TTL logic |
| Driven Device | — | IGBT (and MOSFET / SiC compatible) |
| Short-Circuit Protection | — | Short-circuit clamping |
| Estado RoHS | — | Compliant |