1EDN8511BXUSA1 vs 1ED3323MC12NXUMA1 Vergleich
Detaillierter Direktvergleich von 1EDN8511BXUSA1 von Infineon und 1ED3323MC12NXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 1EDN8511BXUSA1 | 1ED3323MC12NXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,54 | $1,25 |
| Channel Count | 1 | — |
| Driver Configuration | Low-side | — |
| Peak Source Current | 4 A | 8.5 A |
| Peak Sink Current | 8 A | 9 A |
| Input Stage | Inverting and non-inverting | — |
| Propagation Delay Accuracy | [DATA_NEEDED: typical propagation delay] | — |
| UVLO Threshold | 8 V | — |
| Driver Supply Voltage (VCC) | [DATA_NEEDED: VCC range upper limit] | — |
| Betriebs-Sperrschichttemperatur | -40 °C to +150 °C | — |
| Gehäuse | PG-SOT23-6-2 | PG-DSO-16-40 |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 6 | — |
| Logic Input Compatibility | TTL / CMOS | — |
| Target Switch Type | Power MOSFET, GaN HEMT | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Funktion | — | Single-channel isolated gate driver |
| Isolation Voltage (Vrms) | — | 5.7 kVrms |
| Number of Channels | — | 1 |
| Primary-Side Supply Voltage (VDD1) | — | 3.1 V to 5.5 V |
| Secondary-Side Supply Voltage (VCC2) | — | 9 V to 18 V |
| Propagation Delay (typ) | — | 85 ns |
| Common-Mode Transient Immunity (CMTI) | — | [DATA_NEEDED: CMTI in kV/us] |
| Protection Features | — | DESAT short-circuit, soft-off, Miller clamp, UVLO |
| Betriebstemperaturbereich | — | -40 C to +125 C |
| Family | — | EiceDRIVER F3 Enhanced (1ED332x) |
| Isolation Technology | — | Coreless Transformer (CT) |