1EDN8511BXUSA1 vs 1ED3323MC12NXUMA1 对比

详细并排对比 1EDN8511BXUSA1 出自 Infineon 和 1ED3323MC12NXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1EDN8511BXUSA1 1EDN8511BXUSA1 - 1-Ch 4A/8A Low-Side Gate Driver | Infineon

1EDN8511BXUSA1 - 1-Ch 4A/8A Low-Side Gate Driver | Infineon

1EDN8511BXUSA1 ✓ 量产中
Infineon
1ED3323MC12NXUMA1 1ED3323MC12NXUMA1 - 5.7kV Isolated Gate Driver | Infineon

1ED3323MC12NXUMA1 - 5.7kV Isolated Gate Driver | Infineon

1ED3323MC12NXUMA1 ✓ 量产中

规格对比

参数 1EDN8511BXUSA1 1ED3323MC12NXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.54 $1.25
Channel Count 1 —
Driver Configuration Low-side —
Peak Source Current 4 A 8.5 A
Peak Sink Current 8 A 9 A
Input Stage Inverting and non-inverting —
Propagation Delay Accuracy [DATA_NEEDED: typical propagation delay] —
UVLO Threshold 8 V —
Driver Supply Voltage (VCC) [DATA_NEEDED: VCC range upper limit] —
工作结温 -40 °C to +150 °C —
封装 PG-SOT23-6-2 PG-DSO-16-40
安装类型 Surface Mount Surface Mount
引脚数量 6 —
Logic Input Compatibility TTL / CMOS —
Target Switch Type Power MOSFET, GaN HEMT —
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
功能 — Single-channel isolated gate driver
Isolation Voltage (Vrms) — 5.7 kVrms
Number of Channels — 1
Primary-Side Supply Voltage (VDD1) — 3.1 V to 5.5 V
Secondary-Side Supply Voltage (VCC2) — 9 V to 18 V
Propagation Delay (typ) — 85 ns
Common-Mode Transient Immunity (CMTI) — [DATA_NEEDED: CMTI in kV/us]
Protection Features — DESAT short-circuit, soft-off, Miller clamp, UVLO
工作温度范围 — -40 C to +125 C
Family — EiceDRIVER F3 Enhanced (1ED332x)
Isolation Technology — Coreless Transformer (CT)

数据手册与资源

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