1N6263 vs 1N5711 Vergleich

Detaillierter Direktvergleich von 1N6263 von STMicroelectronics und 1N5711 von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1N6263 1N5711
Marke STMicroelectronics STMicroelectronics
Kategorie Diodes Diodes
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,12 $0,18
Diode Type Small Signal Schottky (metal-to-silicon junction) Small-signal Schottky barrier (RF) diode
Repetitive Peak Reverse Voltage (VRRM) 60 V —
Average Forward Current (IF) 15 mA —
Power Dissipation 400 mW 430 mW
Forward Voltage (VF) [DATA_NEEDED: forward voltage] 0.41 V (at 1 mA, per MACOM)
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Junction Capacitance [DATA_NEEDED: junction capacitance] —
Reverse Recovery Time Ultrafast (no stored charge, barrier-limited) —
Surge Current Rating (IFSM) [DATA_NEEDED: surge current] —
Technology Guard-ring Schottky barrier —
Application Focus UHF/VHF detection, pulse applications, broad dynamic range —
Gehäuse DO-35 (axial, through-hole glass) DO-35 (DO-204AH) hermetic axial-lead glass
Montageart Through Hole Through-Hole
Number of Elements 1 —
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] —
RoHS-Status [DATA_NEEDED: RoHS status] Compliant
Peak Reverse Voltage (VRRM) — 70 V
Continuous Forward Current (IF) — 15 mA
Total Capacitance — 2 pF
Junction Capacitance (Cj) — 1 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
Betriebstemperatur — [DATA_NEEDED: operating temperature range]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current at rated VR]

Datenblätter & Ressourcen

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